scholarly journals Determination of the piezoelectric field in InGaN quantum wells

2005 ◽  
Vol 86 (13) ◽  
pp. 131108 ◽  
Author(s):  
I. H. Brown ◽  
I. A. Pope ◽  
P. M. Smowton ◽  
P. Blood ◽  
J. D. Thomson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

2013 ◽  
Vol 6 (11) ◽  
pp. 112101 ◽  
Author(s):  
Bastian Galler ◽  
Hans-Jürgen Lugauer ◽  
Michael Binder ◽  
Richard Hollweck ◽  
Yannick Folwill ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Determination ◽  
Auger Recombination ◽  
Dominant Type ◽  
Ingan Quantum Wells

Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1863-1865 ◽  
Author(s):  
Lev Avakyants ◽  
Pavel Bokov ◽  
Anatoly Chervyakov ◽  
Alexander Yunovich ◽  
Elena Vasileva ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

Determination of photoluminescence mechanism in InGaN quantum wells

1999 ◽  
Vol 75 (15) ◽  
pp. 2241-2243 ◽  
Author(s):  
Philippe Riblet ◽  
Hideki Hirayama ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Takuo Sugano ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Mechanism ◽  
Ingan Quantum Wells

The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells

1998 ◽  
Vol 512 ◽  
Author(s):  
Piotr Perlin ◽  
Christian Kisielowski ◽  
Laila Mattos ◽  
Noad A. Shapiro ◽  
Joachim Kruger ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Piezoelectric Effect ◽  
Blue Shift ◽  
Peak Position ◽  
Normal Band ◽  
Pumping Power ◽  
Piezoelectric Field ◽  
Band Tailing ◽  
Ingan Quantum Wells

ABSTRACTA photoluminescence from a multiquantum GaN/InxGa1−xN/GaN well structure (x varies between 0.1 to 0.4) was investigated at various temperatures, pumping powers. While the temperature dependence of the peak position indicates normal band to band character of radiative recombination, the large pumping power induced “blue”shift of the peak position (up to 200 meV) can be observed. This kind of shift cannot be easily explained by the band tailing effect but is most likely the result of the screening of the strain-induced piezoelectric field. By evaluating the theoretical values of the piezoelectric filelds in the quantum well, we can show that in order to account for the experimental results we have to assume the partial relaxation of the strain.

scholarly journals III-nitride optoelectronic devices containing wide quantum wells - unexpectedly efficient light sources

2021 ◽  
Author(s):  
Grzegorz Muziol ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Katarzyna Pieniak ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Stark Effect ◽  
High Efficiency ◽  
Optoelectronic Devices ◽  
Optical Gain ◽  
Light Sources ◽  
Quantum Confined Stark Effect ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

Abstract In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs are known to suffer from an extremely high built-in piezoelectric polarization, which separates the electron and hole wavefunctions and causes the quantum-confined Stark effect. It is shown, both by means of modeling and experimentally, that wide InGaN QWs can have quantum efficiency superior to commonly used thin QWs. The high efficiency is explained by initial screening of the piezoelectric field and subsequent emergence of optical transitions involving the excited states of electrons and holes, which have a high oscillator strength. A high pressure spectroscopy and photocurrent measurements are used to verify the mechanism of recombination through excited states. Furthermore, the influence of QW width on the properties of optoelectronic devices is studied. In particular, it is shown how the optical gain forms in laser diodes with wide InGaN QWs.

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