Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1863-1865 ◽  
Author(s):  
Lev Avakyants ◽  
Pavel Bokov ◽  
Anatoly Chervyakov ◽  
Alexander Yunovich ◽  
Elena Vasileva ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

scholarly journals Determination of the piezoelectric field in InGaN quantum wells

2005 ◽  
Vol 86 (13) ◽  
pp. 131108 ◽  
Author(s):  
I. H. Brown ◽  
I. A. Pope ◽  
P. M. Smowton ◽  
P. Blood ◽  
J. D. Thomson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells

1998 ◽  
Vol 512 ◽  
Author(s):  
Piotr Perlin ◽  
Christian Kisielowski ◽  
Laila Mattos ◽  
Noad A. Shapiro ◽  
Joachim Kruger ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Piezoelectric Effect ◽  
Blue Shift ◽  
Peak Position ◽  
Normal Band ◽  
Pumping Power ◽  
Piezoelectric Field ◽  
Band Tailing ◽  
Ingan Quantum Wells

ABSTRACTA photoluminescence from a multiquantum GaN/InxGa1−xN/GaN well structure (x varies between 0.1 to 0.4) was investigated at various temperatures, pumping powers. While the temperature dependence of the peak position indicates normal band to band character of radiative recombination, the large pumping power induced “blue”shift of the peak position (up to 200 meV) can be observed. This kind of shift cannot be easily explained by the band tailing effect but is most likely the result of the screening of the strain-induced piezoelectric field. By evaluating the theoretical values of the piezoelectric filelds in the quantum well, we can show that in order to account for the experimental results we have to assume the partial relaxation of the strain.

scholarly journals III-nitride optoelectronic devices containing wide quantum wells - unexpectedly efficient light sources

2021 ◽  
Author(s):  
Grzegorz Muziol ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Katarzyna Pieniak ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excited States ◽  
Stark Effect ◽  
High Efficiency ◽  
Optoelectronic Devices ◽  
Optical Gain ◽  
Light Sources ◽  
Quantum Confined Stark Effect ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

Abstract In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs are known to suffer from an extremely high built-in piezoelectric polarization, which separates the electron and hole wavefunctions and causes the quantum-confined Stark effect. It is shown, both by means of modeling and experimentally, that wide InGaN QWs can have quantum efficiency superior to commonly used thin QWs. The high efficiency is explained by initial screening of the piezoelectric field and subsequent emergence of optical transitions involving the excited states of electrons and holes, which have a high oscillator strength. A high pressure spectroscopy and photocurrent measurements are used to verify the mechanism of recombination through excited states. Furthermore, the influence of QW width on the properties of optoelectronic devices is studied. In particular, it is shown how the optical gain forms in laser diodes with wide InGaN QWs.

Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

2007 ◽  
Vol 91 (12) ◽  
pp. 123503 ◽  
Author(s):  
Ulrich T. Schwarz ◽  
H. Braun ◽  
K. Kojima ◽  
Y. Kawakami ◽  
S. Nagahama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Light ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells
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