Determination of photoluminescence mechanism in InGaN quantum wells

1999 ◽  
Vol 75 (15) ◽  
pp. 2241-2243 ◽  
Author(s):  
Philippe Riblet ◽  
Hideki Hirayama ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Takuo Sugano ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Mechanism ◽  
Ingan Quantum Wells

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

2013 ◽  
Vol 6 (11) ◽  
pp. 112101 ◽  
Author(s):  
Bastian Galler ◽  
Hans-Jürgen Lugauer ◽  
Michael Binder ◽  
Richard Hollweck ◽  
Yannick Folwill ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Determination ◽  
Auger Recombination ◽  
Dominant Type ◽  
Ingan Quantum Wells

scholarly journals Determination of the piezoelectric field in InGaN quantum wells

2005 ◽  
Vol 86 (13) ◽  
pp. 131108 ◽  
Author(s):  
I. H. Brown ◽  
I. A. Pope ◽  
P. M. Smowton ◽  
P. Blood ◽  
J. D. Thomson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

1994 ◽  
Vol 37 (4-6) ◽  
pp. 665-667 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
F. Kobbi ◽  
M. Kamal-Saadi ◽  
D. Dur ◽  
C. Skierbiszewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Basic Parameters

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Directly correlated microscopy of trench defects in InGaN quantum wells

2021 ◽  
pp. 113255
Author(s):  
T.J. O'Hanlon ◽  
F C-P. Massabuau ◽  
A. Bao ◽  
M.J. Kappers ◽  
R.A. Oliver
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells ◽  
Correlated Microscopy

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

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