scholarly journals Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films

2005 ◽  
Vol 86 (11) ◽  
pp. 112904 ◽  
Author(s):  
R. Meyer ◽  
R. Liedtke ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Leakage Current ◽  
Time Dependent ◽  
Vacancy Migration ◽  
Current Behavior

Time-dependent oxygen vacancy distribution and gas sensing characteristics of tin oxide gas sensitive thin films

2010 ◽  
Vol 150 (1) ◽  
pp. 330-338 ◽  
Author(s):  
Jianqiao Liu ◽  
Shuping Gong ◽  
Qiuyun Fu ◽  
Yi Wang ◽  
Lin Quan ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Time Dependent ◽  
Vacancy Distribution ◽  
Sensing Characteristics

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

Leakage current behavior of SrBi2Ta2O9 ferroelectric thin films on different bottom electrodes

2002 ◽  
Vol 92 (10) ◽  
pp. 6160-6164 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Thin Films ◽  
Current Behavior

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

2007 ◽  
Vol 101 (3) ◽  
pp. 034106 ◽  
Author(s):  
Arnab Mukherjee ◽  
P. Victor ◽  
J. Parui ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Current Behavior

Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

2016 ◽  
Vol 18 (1) ◽  
pp. 197-204 ◽  
Author(s):  
Yooun Heo ◽  
Daisuke Kan ◽  
Yuichi Shimakawa ◽  
Jan Seidel
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Vacancy Concentration ◽  
Strong Dependence ◽  
Time Dependent ◽  
Oxygen Vacancy Concentration ◽  
Cooling Conditions

Bias- and time-dependent resistive switching measurements of BaTiO3−δ, i.e. oxygen-deficient barium titanate (BaTiO3) thin films, reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films.

Microstructural influence on piezoresponse and leakage current behavior of Na0.5Bi0.5TiO3 Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2597-2602
Author(s):  
Kumaraswamy Miriyala ◽  
Ranjith Ramadurai
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Free ◽  
Domain Pattern ◽  
Partial Pressures ◽  
Spherical Grains ◽  
Current Behavior

AbstractSodium bismuth titanate (Na0.5Bi0.5TiO3: NBT) a lead free piezoelectric; exhibits promising features such that it could be an alternate to lead based piezoelectrics. In this work, we report the microstructural influence on piezoelectric and leakage current behavior of NBT thin films grown by pulsed laser ablation (PLD). Various microstructural features like coarse faceted grains and fine spherical grains was achieved by effective optimization of substrate temperature and oxygen partial pressures. The studies reveals that, leakage current of NBT thin films were dominated by interface limited modified Schottky emission type of conduction. The piezoelectric domain studies reveal that for NBT thin films with fine spherical grain the domain pattern was highly dominated by the morphology and in the case of coarse faceted grains the domains were relatively large and the domains were extending beyond the grain boundaries.

Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films

2009 ◽  
Vol 105 (4) ◽  
pp. 044103 ◽  
Author(s):  
A. Roy ◽  
S. Maity ◽  
A. Dhar ◽  
D. Bhattacharya ◽  
S. K. Ray
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Temperature Dependent ◽  
Current Behavior
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