Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

2005 ◽  
Vol 86 (5) ◽  
pp. 052101 ◽  
Author(s):  
R. M. Frazier ◽  
G. T. Thaler ◽  
J. Y. Leifer ◽  
J. K. Hite ◽  
B. P. Gila ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

Ferromagnetism in lightly Gd doped GaN: The role of defects

2011 ◽  
Vol 1290 ◽  
Author(s):  
J. K. Mishra ◽  
S. Dhar ◽  
M. A. Khaderabad ◽  
O. Brandt
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Saturation Magnetization ◽  
Magnetic Moment ◽  
Molecular Beam ◽  
Defect Density ◽  
Defect Cluster ◽  
Clear Correlation ◽  
Defect Band

ABSTRACTGd:GaN layers grown with different Gd concentrations by molecular beam epitaxy (MBE) are studied using photoconductivity and photo-thermoelectric power spectroscopy. Our study reveals that the incorporation of Gd produces a large concentration of acceptor-like defects in the GaN lattice. The defect band is found to be located ~450meV above the valence band. Moreover, the concentration of defects is found to increase with the Gd concentration. The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is also investigated. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. The colossal magnetic moment per Gd ion and the ferromagnetism observed in this material is explained in terms of the formation of giant defect cluster around each Gd ion.

Dependence of magnetic properties on the growth conditions of MnGaN grown by rf N plasma molecular beam epitaxy

2005 ◽  
Vol 202 (6) ◽  
pp. 1135-1144 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Gabriel Caruntu ◽  
Charles J. O'Connor ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

Growth conditions to optimize chemical order and magnetic properties in molecular-beam-epitaxy-grown CoPt/MgO(001) thin films

2003 ◽  
Vol 93 (5) ◽  
pp. 2987-2995 ◽  
Author(s):  
O. Ersen ◽  
V. Parasote ◽  
V. Pierron-Bohnes ◽  
M. C. Cadeville ◽  
C. Ulhaq-Bouillet
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Chemical Order

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

2002 ◽  
Vol 246 (1-2) ◽  
pp. 55-63 ◽  
Author(s):  
E Haus ◽  
I.P Smorchkova ◽  
B Heying ◽  
P Fini ◽  
C Poblenz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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