Growth conditions to optimize chemical order and magnetic properties in molecular-beam-epitaxy-grown CoPt/MgO(001) thin films

2003 ◽  
Vol 93 (5) ◽  
pp. 2987-2995 ◽  
Author(s):  
O. Ersen ◽  
V. Parasote ◽  
V. Pierron-Bohnes ◽  
M. C. Cadeville ◽  
C. Ulhaq-Bouillet
2019 ◽  
Vol 507 ◽  
pp. 163-167 ◽  
Author(s):  
Taro Komori ◽  
Akihito Anzai ◽  
Toshiki Gushi ◽  
Kaoru Toko ◽  
Takashi Suemasu

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.


1995 ◽  
Vol 384 ◽  
Author(s):  
P.A.A. Van Der Heijden ◽  
J.J. Hammink ◽  
PJ.H. Bloemen ◽  
R.M. Wolf ◽  
M.G. Van Opstal ◽  
...  

ABSTRACTCoherent epitaxial Fe3O4 layers in the range of 0 to 400 Å have been grown by molecular beam epitaxy on single crystal MgO(100) substrates. The magnetic properties were studied by local magneto-optical Kerr effect experiments on a wedge shaped Fe3O4 layer, by ferromagnetic resonance and SQUID. The results show that the magnetic behavior of the Fe3O4 thin films resembles bulk Fe3O4 in the investigated thickness range.


2007 ◽  
Vol 102 (6) ◽  
pp. 063911 ◽  
Author(s):  
S. X. Wu ◽  
Y. Q. Xia ◽  
X. L. Yu ◽  
Y. J. Liu ◽  
S. W. Li

2005 ◽  
Vol 202 (6) ◽  
pp. 1135-1144 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Gabriel Caruntu ◽  
Charles J. O'Connor ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka

AbstractA series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.


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