Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

2005 ◽  
Vol 97 (6) ◽  
pp. 064907 ◽  
Author(s):  
M. Halbwax ◽  
D. Bouchier ◽  
V. Yam ◽  
D. Débarre ◽  
Lam H. Nguyen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Kinetics Of

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
Dong-Jun Kim ◽  
Kyoung-Kook Kim ◽  
Jong-Sik Paek ◽  
Min-Su Yi ◽  
Do-Young Noh ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Nitridation Time ◽  
Nir Absorption

AbstractGaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000Å thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and AlxO1-xN, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaNr(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.

Low temperature growth of silicon‐boron layer by ultrahigh vacuum chemical vapor deposition

1994 ◽  
Vol 64 (14) ◽  
pp. 1853-1855 ◽  
Author(s):  
T. P. Chen ◽  
T. F. Lei ◽  
H. C. Lin ◽  
C. Y. Chang ◽  
W. Y. Hsieh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth

Growth of Thick Ge Epilayers on Si(100) Substrates Utilizing Two-Step Approach by Ultrahigh Vacuum Chemical Vapor Deposition

2013 ◽  
Vol 860-863 ◽  
pp. 890-893
Author(s):  
Zhi Wen Zhou ◽  
Yue Zhong Zhang ◽  
Xiao Xia Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Compressive Strain ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Threading Dislocation

Ge epilayers on low temperature (LT) Ge buffer layers were grown by ultrahigh vacuum chemical vapor deposition using the two-step approach. Effects of the growth temperature and the thickness of the low temperature Ge buffers were studied. It was demonstrated that it was unable to obtain flat LT Ge buffers just through lowering the growth temperature due to the ultraslow grow rate that 3D islands formation couldnt be prohibited. However, the rough LT Ge surface was smoothed by subsequent growth at elevated temperature if the LT Ge layer was thick enough and the compressive strain was relaxed largely, and the detrimental Si-Ge intermixing was effectively prohibited as well. When using proper growth conditions for the low temperature Ge buffer, thick Ge epilayer with a low threading dislocation density and a smooth surface was obtained.

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

1997 ◽  
Vol 482 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Dong-Jun Kim ◽  
Jong-Sik Paek ◽  
Je-Hee Jo ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Nucleation Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractThis study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

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