Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
Dong-Jun Kim ◽  
Kyoung-Kook Kim ◽  
Jong-Sik Paek ◽  
Min-Su Yi ◽  
Do-Young Noh ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Nitridation Time ◽  
Nir Absorption

AbstractGaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000Å thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and AlxO1-xN, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaNr(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Synthesis of GaN Nanoparticles by DC Plasma Enhanced Chemical Vapor Deposition

2013 ◽  
Vol 829 ◽  
pp. 897-901 ◽  
Author(s):  
Mahdi Gholampour ◽  
Amir Abdollah-Zadeh ◽  
Reza Poursalehi ◽  
Leila Shekari
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Direct Reaction ◽  
Sem Images ◽  
Nanoparticle Deposition ◽  
X Ray ◽  
Preferred Direction

The unique optical properties of nanostructured GaN basically, turn it as a very important part of many electronic and optoelectronic devices such as high power transistors, UV detectors, solar cells, lasers and blue LED. The aim of the current study is GaN nanoparticle deposition at low temperature in preferred direction. In this work, GaN nanoparticles were prepared using direct current plasma enhanced chemical vapor deposition (DC-PECVD) method on Si (100) wafer as a substrate at 700°C. Gallium metal and nitrogen plasma were used as precursors. GaN nanoparticles were grown based on the direct reaction between gallium atoms and excited nitrogen species in the plasma. Structural and morphological characterizations of GaN nanoparticles were carried out using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and field emissions electron microscopy (FE-SEM). Preferred (100) direction of GaN nanostructures which obtained by careful control of processing parameters, were revealed by XRD. FE-SEM images show the average diameter of nanoparticles is 37 nm. The EDS results show the Ga to N ratio in the sample was 8.8 to 1.2 by weight which is very close to the Ga to N ratio of prefect GaN crystal. The deviance is related to the nitrogen vacancy of the sample. These results demonstrate a simple inexpensive method for GaN nanoparticle deposition at low temperature which is critical for many of applications.

Low temperature growth of silicon‐boron layer by ultrahigh vacuum chemical vapor deposition

1994 ◽  
Vol 64 (14) ◽  
pp. 1853-1855 ◽  
Author(s):  
T. P. Chen ◽  
T. F. Lei ◽  
H. C. Lin ◽  
C. Y. Chang ◽  
W. Y. Hsieh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals Stability of SiNx Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3363
Author(s):  
Chi Zhang ◽  
Majiaqi Wu ◽  
Pengchang Wang ◽  
Maoliang Jian ◽  
Jianhua Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Environmental Stability ◽  
X Ray ◽  
Flexible Devices ◽  
Infrared Reflection

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiNx films. Variation of mechanical and optical properties were also evaluated. It is found that SiNx deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiNx films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices.

Growth of Thick Ge Epilayers on Si(100) Substrates Utilizing Two-Step Approach by Ultrahigh Vacuum Chemical Vapor Deposition

2013 ◽  
Vol 860-863 ◽  
pp. 890-893
Author(s):  
Zhi Wen Zhou ◽  
Yue Zhong Zhang ◽  
Xiao Xia Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Compressive Strain ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Threading Dislocation

Ge epilayers on low temperature (LT) Ge buffer layers were grown by ultrahigh vacuum chemical vapor deposition using the two-step approach. Effects of the growth temperature and the thickness of the low temperature Ge buffers were studied. It was demonstrated that it was unable to obtain flat LT Ge buffers just through lowering the growth temperature due to the ultraslow grow rate that 3D islands formation couldnt be prohibited. However, the rough LT Ge surface was smoothed by subsequent growth at elevated temperature if the LT Ge layer was thick enough and the compressive strain was relaxed largely, and the detrimental Si-Ge intermixing was effectively prohibited as well. When using proper growth conditions for the low temperature Ge buffer, thick Ge epilayer with a low threading dislocation density and a smooth surface was obtained.

The Effect Of The Nucleation Layer On The Low Temperature Growth Of Gan Using A Remote Plasma Enhanced – Ultrahigh Vacuum Chemical Vapor Deposition (RPE-UHVCVD)

1997 ◽  
Vol 482 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Dong-Jun Kim ◽  
Jong-Sik Paek ◽  
Je-Hee Jo ◽  
Hyo-Gun Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Nucleation Layer ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractThis study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 °C. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

2005 ◽  
Vol 97 (6) ◽  
pp. 064907 ◽  
Author(s):  
M. Halbwax ◽  
D. Bouchier ◽  
V. Yam ◽  
D. Débarre ◽  
Lam H. Nguyen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Kinetics Of
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