Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization

2005 ◽  
Vol 86 (4) ◽  
pp. 044105 ◽  
Author(s):  
K. Hirata ◽  
Y. Saitoh ◽  
A. Chiba ◽  
K. Narumi ◽  
Y. Kobayashi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Impact Ionization ◽  
Time Of Flight ◽  
Semiconductor Surface ◽  
Secondary Ion Mass Spectroscopy ◽  
Highly Sensitive ◽  
Secondary Ion

An investigation of the wear track on DLC (a-C:H) film by time-of-flight secondary ion mass spectroscopy

2001 ◽  
Vol 146-147 ◽  
pp. 378-383 ◽  
Author(s):  
Haruyo Fukui ◽  
Miki Irie ◽  
Yoshiharu Utsumi ◽  
Kazuhiko Oda ◽  
Hisanori Ohara
Keyword(s):  
Mass Spectroscopy ◽  
Wear Track ◽  
Time Of Flight ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy

2013 ◽  
Vol 15 (14) ◽  
pp. 5202 ◽  
Author(s):  
Robert J. Thompson ◽  
Sarah Fearn ◽  
Ke Jie Tan ◽  
Hans George Cramer ◽  
Christian L. Kloc ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mass Spectroscopy ◽  
Time Of Flight ◽  
Surface Oxidation ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion
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