Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

2005 ◽  
Vol 97 (1) ◽  
pp. 014104 ◽  
Author(s):  
A. Avellán ◽  
E. Miranda ◽  
D. Schroeder ◽  
W. Krautschneider
Keyword(s):  
Temperature Dependence ◽  
Gate Oxides ◽  
Soft Breakdown

Soft breakdown current noise in ultra-thin gate oxides

2002 ◽  
Vol 46 (7) ◽  
pp. 1019-1025 ◽  
Author(s):  
A. Cester ◽  
L. Bandiera ◽  
G. Ghidini ◽  
I. Bloom ◽  
A. Paccagnella
Keyword(s):  
Current Noise ◽  
Gate Oxides ◽  
Soft Breakdown

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

1998 ◽  
Vol 84 (8) ◽  
pp. 4351-4355 ◽  
Author(s):  
M. Houssa ◽  
T. Nigam ◽  
P. W. Mertens ◽  
M. M. Heyns
Keyword(s):  
Gate Oxides ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Soft Breakdown

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

2002 ◽  
Vol 42 (4-5) ◽  
pp. 565-571 ◽  
Author(s):  
M.K. Radhakrishnan ◽  
K.L. Pey ◽  
C.H. Tung ◽  
W.H. Lin
Keyword(s):  
Physical Analysis ◽  
Gate Oxides ◽  
Soft Breakdown
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