Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon

2004 ◽  
Vol 96 (5) ◽  
pp. 3031-3033
Author(s):  
Hongjie Wang ◽  
Deren Yang ◽  
Xuegong Yu ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Oxidation-induced stacking faults and related grown-in oxygen precipitates in nitrogen-doped Czochralski silicon

2003 ◽  
Vol 18 (4) ◽  
pp. 393-397 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Yejun Shen ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

2003 ◽  
Vol 95-96 ◽  
pp. 111-116 ◽  
Author(s):  
De Ren Yang ◽  
Hong Jie Wang ◽  
Xuegong Yu ◽  
Xiang Yang Ma ◽  
Duan Lin Que
Keyword(s):  
Thermal Stability ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitates ◽  
Thermal Stability Of

Effect of Oxygen Precipitates in Annealed Electron Irradiated Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1019-1022
Author(s):  
Guifeng Chen ◽  
Xiaowei Ma ◽  
Yunna Bai ◽  
Lili Cai ◽  
Yangxian Li
Keyword(s):  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

2010 ◽  
Vol 312 (2) ◽  
pp. 169-173 ◽  
Author(s):  
Zhidan Zeng ◽  
Xiangyang Ma ◽  
Jiahe Chen ◽  
Deren Yang ◽  
Ingmar Ratschinski ◽  
...  
Keyword(s):  
Dislocation Motion ◽  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

2003 ◽  
Vol 66 (1-4) ◽  
pp. 305-313 ◽  
Author(s):  
G.A. Rozgonyi ◽  
A. Karoui ◽  
A. Kvit ◽  
G. Duscher
Keyword(s):  
Scale Analysis ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Nano Scale

Copper precipitation in nitrogen-doped Czochralski silicon

2008 ◽  
Vol 104 (1) ◽  
pp. 013508 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Copper Precipitation
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