Effect of Oxygen Precipitates in Annealed Electron Irradiated Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1019-1022
Author(s):  
Guifeng Chen ◽  
Xiaowei Ma ◽  
Yunna Bai ◽  
Lili Cai ◽  
Yangxian Li
Keyword(s):  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon

2004 ◽  
Vol 96 (5) ◽  
pp. 3031-3033
Author(s):  
Hongjie Wang ◽  
Deren Yang ◽  
Xuegong Yu ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

2010 ◽  
Vol 312 (2) ◽  
pp. 169-173 ◽  
Author(s):  
Zhidan Zeng ◽  
Xiangyang Ma ◽  
Jiahe Chen ◽  
Deren Yang ◽  
Ingmar Ratschinski ◽  
...  
Keyword(s):  
Dislocation Motion ◽  
Czochralski Silicon ◽  
Effect Of Oxygen ◽  
Oxygen Precipitates

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals

1994 ◽  
Vol 33 (Part 2, No. 1A) ◽  
pp. L5-L8 ◽  
Author(s):  
Hitoshi Sasaki ◽  
Mikio Kadoi ◽  
Hisashi Furuya ◽  
Takayuki Shingyouji ◽  
Yasushi Shimanuki
Keyword(s):  
Single Crystals ◽  
Radial Distribution ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon

2016 ◽  
Vol 445 ◽  
pp. 53-57
Author(s):  
Jin Xu ◽  
Yaochao Lv ◽  
Weibin Guo ◽  
Tingting Xie
Keyword(s):  
Czochralski Silicon ◽  
Vacancy Complex ◽  
Oxygen Precipitates

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

2003 ◽  
Vol 95-96 ◽  
pp. 111-116 ◽  
Author(s):  
De Ren Yang ◽  
Hong Jie Wang ◽  
Xuegong Yu ◽  
Xiang Yang Ma ◽  
Duan Lin Que
Keyword(s):  
Thermal Stability ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitates ◽  
Thermal Stability Of
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