scholarly journals Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

2004 ◽  
Vol 85 (3) ◽  
pp. 455-457 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Harry A. Atwater
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Layer Transfer ◽  
Microstructure And Properties

Planar single-crystal thin-films of YAG obtained by ion implantation and thermal exfoliation: Mechanical properties

2012 ◽  
Vol 35 (1) ◽  
pp. 25-28 ◽  
Author(s):  
O. Gaathon ◽  
J.D. Adam ◽  
S.V. Krishnaswamy ◽  
J.W. Kysar ◽  
S. Bakhru ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Ion Implantation ◽  
Single Crystal

Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

2006 ◽  
Vol 18 (12) ◽  
pp. 1533-1536 ◽  
Author(s):  
Y.-B. Park ◽  
B. Min ◽  
K. J. Vahala ◽  
H. A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Layer Transfer

Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films

2004 ◽  
Vol 811 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Matthew J. Dicken ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Ferroelectric Materials ◽  
High Dose ◽  
Bulk Crystals ◽  
Amorphous Si ◽  
Silicon Based ◽  
Kinetics Of

ABSTRACTLayer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.

Formation of Single-crystal CoSi2 Buffer Layers on Si(100) Substrates by High Dose Co Ion Implantation for the Deposition of YBa2Cu3O7−x Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 2072-2080 ◽  
Author(s):  
Yijie Li ◽  
P. Seidel ◽  
F. Machalett ◽  
S. Linzen ◽  
F. Schmidl
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Ybco Film ◽  
Rutherford Backscattering Spectrometry ◽  
Multilayered Structure ◽  
Buffer Layers ◽  
High Dose ◽  
Ybco Films ◽  
Minimum Yield

High quality single-crystal CoSi2 layers have been successfully formed on Si(100) using low energy high dose Co ion implantation followed by subsequent annealing method as a buffer layer for the deposition of YBa2Cu3O7−x (YBCO) thin films. Rutherford backscattering spectrometry with channeling (RBS-C) measurements showed that CoSi2 layers after annealing at temperatures between 850 and 950 °C had a minimum yield Xmin of about 3%. X-ray diffraction (XRD) spectra revealed that CoSi2 layers had the same orientation as the Si(100) substrates. Phi scan XRD spectra proved that CoSi2 layers epitaxially grew in the cube-on-cube epitaxial growth mode with respect to the Si(100) substrates. YBCO films and CeO2/YSZ buffer layers were deposited on CoSi2/Si(100) substrates via laser ablation and electron beam evaporation, respectively. θ-2θ, ω, and φ scan XRD spectra illustrated that YBCO films and CeO2/YSZ buffer layers had the epitaxial structure both in a-b plane and along the c-axis. YBCO films grown on this multilayered structure demonstrated excellent superconducting properties with the zero resistance transition temperature Tc0 of 87–90 K. The transition width (ΔTc) was about 1 K. Orientation and epitaxial crystalline quality of YBCO films and CeO2/YSZ buffer layers were confirmed by XRD and RBS-C characterization. All films consisted of c-axis oriented grains. RBS-C spectra indicated a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 8%, and interdiffusion between the YBCO film and buffer layers or between the YBCO film and the substrate was limited. This multilayer system shows the possibility for the application of YBa2Cu3O7−x thin films on technical Si substrates in the field of hybrid superconductor-semiconductor technology.

scholarly journals Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

2007 ◽  
Vol 102 (7) ◽  
pp. 074112 ◽  
Author(s):  
Young-Bae Park ◽  
Kenneth Diest ◽  
Harry A. Atwater
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Layer Transfer ◽  
Single Crystalline

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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