Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films

2004 ◽  
Vol 811 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Matthew J. Dicken ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Ferroelectric Materials ◽  
High Dose ◽  
Bulk Crystals ◽  
Amorphous Si ◽  
Silicon Based ◽  
Kinetics Of

ABSTRACTLayer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.

In situ studies of silicide-mediated crystallization of amorphous Si

1991 ◽  
Vol 49 ◽  
pp. 826-827
Author(s):  
C. Hayzelden ◽  
J.L. Batstonc
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Integrated Circuits ◽  
Ion Implantation ◽  
High Resolution Electron Microscopy ◽  
Nickel Silicide ◽  
Metal Silicides ◽  
Amorphous Si ◽  
Kinetics Of

Metal silicides in thin films play an essential role in the increasingly fine-scale fabrication of integrated circuits. Although commonly produced by interfacial reaction between metal films and silicon, buried metal silicides have recently been produced in crystalline Si by ion-implantation. Cammarata et al., have reported the use of ion-implantation to form buried nickel silicide precipitates in amorphous Si thin films, in which the first (and only) phase to form was NiSi2. The kinetics of the nucleation and growth of NiSi2 precipitates were investigated and an enhancement of the crystallization kinetics of the amorphous Si, apparently due to the migration of silicide precipitates, was found. In this paper, we describe the results of an in-situ transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) investigation of the silicide-mediated crystallization of amorphous Si.

Formation of Single-crystal CoSi2 Buffer Layers on Si(100) Substrates by High Dose Co Ion Implantation for the Deposition of YBa2Cu3O7−x Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 2072-2080 ◽  
Author(s):  
Yijie Li ◽  
P. Seidel ◽  
F. Machalett ◽  
S. Linzen ◽  
F. Schmidl
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Ybco Film ◽  
Rutherford Backscattering Spectrometry ◽  
Multilayered Structure ◽  
Buffer Layers ◽  
High Dose ◽  
Ybco Films ◽  
Minimum Yield

High quality single-crystal CoSi2 layers have been successfully formed on Si(100) using low energy high dose Co ion implantation followed by subsequent annealing method as a buffer layer for the deposition of YBa2Cu3O7−x (YBCO) thin films. Rutherford backscattering spectrometry with channeling (RBS-C) measurements showed that CoSi2 layers after annealing at temperatures between 850 and 950 °C had a minimum yield Xmin of about 3%. X-ray diffraction (XRD) spectra revealed that CoSi2 layers had the same orientation as the Si(100) substrates. Phi scan XRD spectra proved that CoSi2 layers epitaxially grew in the cube-on-cube epitaxial growth mode with respect to the Si(100) substrates. YBCO films and CeO2/YSZ buffer layers were deposited on CoSi2/Si(100) substrates via laser ablation and electron beam evaporation, respectively. θ-2θ, ω, and φ scan XRD spectra illustrated that YBCO films and CeO2/YSZ buffer layers had the epitaxial structure both in a-b plane and along the c-axis. YBCO films grown on this multilayered structure demonstrated excellent superconducting properties with the zero resistance transition temperature Tc0 of 87–90 K. The transition width (ΔTc) was about 1 K. Orientation and epitaxial crystalline quality of YBCO films and CeO2/YSZ buffer layers were confirmed by XRD and RBS-C characterization. All films consisted of c-axis oriented grains. RBS-C spectra indicated a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 8%, and interdiffusion between the YBCO film and buffer layers or between the YBCO film and the substrate was limited. This multilayer system shows the possibility for the application of YBa2Cu3O7−x thin films on technical Si substrates in the field of hybrid superconductor-semiconductor technology.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Planar single-crystal thin-films of YAG obtained by ion implantation and thermal exfoliation: Mechanical properties

2012 ◽  
Vol 35 (1) ◽  
pp. 25-28 ◽  
Author(s):  
O. Gaathon ◽  
J.D. Adam ◽  
S.V. Krishnaswamy ◽  
J.W. Kysar ◽  
S. Bakhru ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Ion Implantation ◽  
Single Crystal

The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into Ni

1993 ◽  
Vol 74 (11) ◽  
pp. 6619-6624 ◽  
Author(s):  
Lynann Clapham ◽  
J. L. Whitton ◽  
R. Pascual ◽  
M. C. Ridgway ◽  
N. Hauser
Keyword(s):  
Ion Implantation ◽  
Sacrificial Layer ◽  
High Dose

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Platinum Ion Implantation Into Single Crystal Zirconia With A Carbon Sacrificial Layer on The Surface

1994 ◽  
Vol 354 ◽  
Author(s):  
D.X. Cao ◽  
J.W. Chu ◽  
A.P. Pogany ◽  
D.K. Sood ◽  
I.G. Brown
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Sample Surface ◽  
Cubic Zirconia ◽  
Ion Damage ◽  
The Matrix

AbstractSingle crystal samples of (100) oriented yttria stabilized cubic zirconia are implanted with Pt ions to doses up to 6x1017 /cm2. Our previous studies showed that the retained Pt dose was too small due to the sputter limit. To overcome this problem, a C film was deposited on the surface of some samples before implantation. The implanted samples were annealed isothermally in air at 400°-1200°C, and were analysed with RBS-C and TEM. The C-layer has been found to be very effective for protecting the sample surface from sputtering and thus increasing the Pt concentration by a factor of two, up to 33 mol.% Pt. The as-implanted Pt was non-substitutional. After annealing at 1200°C for 1 h, Pt diffused to large depths, and showed a substitutional fraction of about 23%. The detailed TEM measurements on the microstructure and damage of the implanted layer show that after annealing at these temperatures the recovery of ion damage is incomplete. Pt atoms undergo substantial migration concurrently. The Pt at first dissolves in the matrix (though not substitutionally), diffuses and precipitates again at high temperature.

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