Planar single-crystal thin-films of YAG obtained by ion implantation and thermal exfoliation: Mechanical properties

2012 ◽  
Vol 35 (1) ◽  
pp. 25-28 ◽  
Author(s):  
O. Gaathon ◽  
J.D. Adam ◽  
S.V. Krishnaswamy ◽  
J.W. Kysar ◽  
S. Bakhru ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Ion Implantation ◽  
Single Crystal

scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films

2004 ◽  
Vol 811 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Matthew J. Dicken ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Ferroelectric Materials ◽  
High Dose ◽  
Bulk Crystals ◽  
Amorphous Si ◽  
Silicon Based ◽  
Kinetics Of

ABSTRACTLayer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.

Formation of Single-crystal CoSi2 Buffer Layers on Si(100) Substrates by High Dose Co Ion Implantation for the Deposition of YBa2Cu3O7−x Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 2072-2080 ◽  
Author(s):  
Yijie Li ◽  
P. Seidel ◽  
F. Machalett ◽  
S. Linzen ◽  
F. Schmidl
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Ybco Film ◽  
Rutherford Backscattering Spectrometry ◽  
Multilayered Structure ◽  
Buffer Layers ◽  
High Dose ◽  
Ybco Films ◽  
Minimum Yield

High quality single-crystal CoSi2 layers have been successfully formed on Si(100) using low energy high dose Co ion implantation followed by subsequent annealing method as a buffer layer for the deposition of YBa2Cu3O7−x (YBCO) thin films. Rutherford backscattering spectrometry with channeling (RBS-C) measurements showed that CoSi2 layers after annealing at temperatures between 850 and 950 °C had a minimum yield Xmin of about 3%. X-ray diffraction (XRD) spectra revealed that CoSi2 layers had the same orientation as the Si(100) substrates. Phi scan XRD spectra proved that CoSi2 layers epitaxially grew in the cube-on-cube epitaxial growth mode with respect to the Si(100) substrates. YBCO films and CeO2/YSZ buffer layers were deposited on CoSi2/Si(100) substrates via laser ablation and electron beam evaporation, respectively. θ-2θ, ω, and φ scan XRD spectra illustrated that YBCO films and CeO2/YSZ buffer layers had the epitaxial structure both in a-b plane and along the c-axis. YBCO films grown on this multilayered structure demonstrated excellent superconducting properties with the zero resistance transition temperature Tc0 of 87–90 K. The transition width (ΔTc) was about 1 K. Orientation and epitaxial crystalline quality of YBCO films and CeO2/YSZ buffer layers were confirmed by XRD and RBS-C characterization. All films consisted of c-axis oriented grains. RBS-C spectra indicated a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 8%, and interdiffusion between the YBCO film and buffer layers or between the YBCO film and the substrate was limited. This multilayer system shows the possibility for the application of YBa2Cu3O7−x thin films on technical Si substrates in the field of hybrid superconductor-semiconductor technology.

Real-Time and Full-Field Deflection Measurement of Thin Films Electroplated on the Single Crystal Silicon Wafers

2006 ◽  
Vol 306-308 ◽  
pp. 1289-1294
Author(s):  
Xi De Li ◽  
Cheng Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Single Crystal ◽  
Sample Size ◽  
Real Time ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Full Field ◽  
Young’S Moduli

A special speckle microinterferometer has been developed to test the mechanical properties of thin films electroplated on the single crystal silicon wafer. A piezo-actuated micro-loading unit is synchronized with the microinterfermeter to measure thin film deflection in bending with an accuracy of sub-micrometers. All of the film specimens were microfabricated to be the type of microbridge samples. They are made of Cu and NiFe, the sizes from 1102.9µm to 213.7µm long, 491.0µm to 9.7µm wide. The corresponding thicknesses are 9.4µm and 7.6µm, respectively. Deflections of the microbradge samples can be measured full-field and real-time by using the microinterferometer and no patterning or marking of the specimen surface is needed. The loading force is directly measured using a miniature load cell. The Young’s moduli are calculated for both material and sample size from the load-deflection curves. Test techniques, procedures and factors which affect on the deflection measurements are briefly presented along with detailed analyzes of the results.

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