scholarly journals Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

2007 ◽  
Vol 102 (7) ◽  
pp. 074112 ◽  
Author(s):  
Young-Bae Park ◽  
Kenneth Diest ◽  
Harry A. Atwater
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Layer Transfer ◽  
Single Crystalline

Formation of Ag single-crystalline thin films by ion implantation with N+ : Xe+

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1264-1267 ◽  
Author(s):  
Zhang Yichen ◽  
Yang Naiheng ◽  
Pang Shijin
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystalline

scholarly journals Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

2003 ◽  
Vol 55 (1) ◽  
pp. 983-990 ◽  
Author(s):  
I. Szafraniak ◽  
I. Radu ◽  
R. Scholz ◽  
M. Alexe ◽  
U. Gösele
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Wafer Bonding ◽  
Ferroelectric Thin Films ◽  
Single Crystalline ◽  
Direct Wafer Bonding

Effects of oxygen ion implantation on single-crystalline MgB2 thin films

2019 ◽  
Vol 125 (2) ◽  
pp. 023904 ◽  
Author(s):  
Duong Pham ◽  
Soon-Gil Jung ◽  
Duc H. Tran ◽  
Tuson Park ◽  
Won Nam Kang
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystalline ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Mgb2 Thin Films

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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