High mobility of pentacene field-effect transistors with polyimide gate dielectric layers

2004 ◽  
Vol 84 (19) ◽  
pp. 3789-3791 ◽  
Author(s):  
Yusaku Kato ◽  
Shingo Iba ◽  
Ryohei Teramoto ◽  
Tsuyoshi Sekitani ◽  
Takao Someya ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Dielectric Layers

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

Study of Solid/liquid Interfaces in Organic Field-effect Transistors with Ionic Liquids

2009 ◽  
Vol 1154 ◽  
Author(s):  
Shimpei Ono ◽  
Kazumoto Miwa ◽  
Shiro Seki ◽  
Jun Takeya
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Double Layers ◽  
Liquid Interfaces ◽  
Organic Thin Film ◽  
Solid Liquid

AbstractWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1.0 μF/cm2 even at 0.1 MHz. With high carrier mobility of 9.5 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

Effects of annealing on pentacene field-effect transistors using polyimide gate dielectric layers

2006 ◽  
Vol 100 (2) ◽  
pp. 024513 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Takao Someya ◽  
Takayasu Sakurai
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Dielectric Layers

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

Low-power and Fast-switching Organic Field-effect Transistors with Ionic Liquids

2008 ◽  
Vol 1082 ◽  
Author(s):  
S. Ono ◽  
S. Seki ◽  
R. Hirahara ◽  
Y. Tominari ◽  
J. Takeya
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Double Layers ◽  
Organic Thin Film ◽  
Fast Switching

ABSTRACTWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 10 μF/cm2 even at 0.1 MHz. With high carrier mobility of 1.2 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

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