High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric

2005 ◽  
Vol 86 (24) ◽  
pp. 242902 ◽  
Author(s):  
Barbara Stadlober ◽  
Martin Zirkl ◽  
Michael Beutl ◽  
Günther Leising ◽  
Simona Bauer-Gogonea ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Polymer Film ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Fluorinated Polymer ◽  
High Dielectric

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Sol Gel ◽  
High Mobility ◽  
Dielectric Films ◽  
Solution Processed ◽  
High Dielectric ◽  
P Type

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material

2014 ◽  
Vol 47 (24) ◽  
pp. 245102 ◽  
Author(s):  
J-W Liu ◽  
M-Y Liao ◽  
M Imura ◽  
E Watanabe ◽  
H Oosato ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Field Effect Transistors ◽  
High Dielectric

scholarly journals Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

2006 ◽  
Vol 89 (18) ◽  
pp. 183516 ◽  
Author(s):  
Se Hyun Kim ◽  
Sang Yoon Yang ◽  
Kwonwoo Shin ◽  
Hayoung Jeon ◽  
Jong Won Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Operating Voltage ◽  
Effect Transistor ◽  
High Dielectric

Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

2004 ◽  
Vol 95 (1) ◽  
pp. 316-322 ◽  
Author(s):  
Guangming Wang ◽  
Daniel Moses ◽  
Alan J. Heeger ◽  
Hong-Mei Zhang ◽  
Mux Narasimhan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
High Dielectric

High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors

2008 ◽  
Vol 205 (12) ◽  
pp. 2970-2974 ◽  
Author(s):  
Hu Yan ◽  
Tsubasa Kagata ◽  
Susumu Arima ◽  
Hiroshi Sato ◽  
Hidenori Okuzaki
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Hafnium Silicate ◽  
High Dielectric
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