Polaron Band Structure and Carrier Mobility in Crystals of Diatomic Molecules and Aromatic Hydrocarbons

1964 ◽  
Vol 41 (11) ◽  
pp. 3574-3581 ◽  
Author(s):  
W. Siebrand
Keyword(s):  
Band Structure ◽  
Aromatic Hydrocarbons ◽  
Carrier Mobility ◽  
Diatomic Molecules ◽  
Polaron Band

Band structure of quasi-one-dimensional polycondensed aromatic hydrocarbons I. Poly(periacene)s

1992 ◽  
Vol 47 (1) ◽  
pp. 21-36 ◽  
Author(s):  
Martin Baumgarten ◽  
Stoyan Karabunarliev ◽  
Karl-Heinz Koch ◽  
Klaus Müllen ◽  
Nikolay Tyutyulkov
Keyword(s):  
Band Structure ◽  
Aromatic Hydrocarbons ◽  
One Dimensional

Epitaxial Semiconducting and Metallic Iron Silicides

1993 ◽  
Vol 320 ◽  
Author(s):  
H. Von KÄNel ◽  
U. Kafader ◽  
P. Sutter ◽  
N. Onda ◽  
H. Sirringhaus ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Metallic Iron ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Molecular Beam ◽  
Significant Contribution ◽  
Majority Carrier ◽  
Iron Silicides

ABSTRACTWe discuss the properties of semiconducting iron silicides, grown epitaxially on Si(001) and Si(111) by molecular beam epitaxy. The growth on Si (111) involves phase transitions from epitaxially stabilized metallic phases, leading to larger epitaxial β-FeSi2 grains than most other deposition procedures. The structural and electric properties of β-FeSi2/Si(001) are improved considerably for growth temperatures above 650 °C. Hall mobilities of p—conducting films reach values up to 600 cm2/Vsec at 100 K, at carrier densities below 1017 cm−3. Despite of the high majority carrier mobility and low carrier density, the photoelectric response of p-β-FeSi2/n-Si(001) diodes does not yield any significant contribution from the silicide, however, in accordance with the expected band structure diagram.

scholarly journals Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021107 ◽  
Author(s):  
Yao Cai ◽  
Yan Liu ◽  
Ying Xie ◽  
Yang Zou ◽  
Chao Gao ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Carrier Mobility ◽  
Strain Engineering

2D AlP3 with high carrier mobility and tunable band structure

2019 ◽  
Vol 32 (5) ◽  
pp. 055001 ◽  
Author(s):  
Hong-Yao Liu ◽  
Chuan-Lu Yang ◽  
Mei-Shan Wang ◽  
Xiao-Guang Ma
Keyword(s):  
Band Structure ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier

Hydrogenated PtP2 monolayer: theoretical predictions on the structure and charge carrier mobility

2019 ◽  
Vol 7 (39) ◽  
pp. 12231-12239 ◽  
Author(s):  
Chunying Pu ◽  
Jiahui Yu ◽  
Rongmei Yu ◽  
Xin Tang ◽  
Dawei Zhou
Keyword(s):  
Band Structure ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Electronic Band Structure ◽  
Charge Carrier Mobility ◽  
Two Dimensional ◽  
Electronic Band ◽  
Theoretical Predictions

Schematic illustration of two dimensional PtP2H2 with its 3D electronic band structure.

Oxygen-induced degradation of the electronic properties of thin-layer InSe

2018 ◽  
Vol 20 (4) ◽  
pp. 2238-2250 ◽  
Author(s):  
Xin Wei ◽  
Chaofang Dong ◽  
Aoni Xu ◽  
Xiaogang Li ◽  
Digby D. Macdonald
Keyword(s):  
Band Structure ◽  
Thin Layer ◽  
Electronic Properties ◽  
Potential Theory ◽  
Structural Relaxation ◽  
First Principles ◽  
Carrier Mobility ◽  
Deformation Potential ◽  
First Principles Calculations ◽  
Deformation Potential Theory

The degradation of thin-layer InSe induced by O atoms was quantificationally studied by first-principles calculations and deformation potential theory from the aspects of structural relaxation, band structure, and carrier mobility.

Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity

2018 ◽  
Vol 11 (9) ◽  
pp. 2486-2495 ◽  
Author(s):  
Yu Xiao ◽  
Haijun Wu ◽  
Juan Cui ◽  
Dongyang Wang ◽  
Liangwei Fu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Effective Mass ◽  
Point Defects ◽  
High Performance ◽  
Carrier Mobility

Synergistically optimizing the band structure and introducing point defects lead to remarkably high ZT in n-type PbTe–MnTe.

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