Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

1996 ◽  
Vol 80 (4) ◽  
pp. 2234-2252 ◽  
Author(s):  
M. V. Fischetti ◽  
S. E. Laux
Keyword(s):  
Band Structure ◽  
Carrier Mobility ◽  
Strained Si ◽  
Structure Deformation

Nanoscale Heat Conduction in the SOI, Strained-Si and Tri-Gate Transistors

2004 ◽  
Author(s):  
Mehdi Asheghi
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Device Performance ◽  
Strained Si ◽  
Insulator Layer ◽  
Junction Capacitance ◽  
Induced Changes ◽  
Soi Technology

There have been many attempts in the recent years to improve the device performance by enhancing carrier mobility by using the strained-induced changes in silicon electronic bands [1–4] or reducing the junction capacitance in silicon-on-insulator (SOI) technology. Strained silicon on insulator (SSOI) is another promising technology, which is expected to show even higher performance, in terms of speed and power consumption, comparing to the regular strained-Si transistors. In this technology, the strained silicon is incorporated in the silicon on insulator (SOI) technology such that the strained-Si introduces high mobility for electrons and holes and the insulator layer (usually SiO2) exhibits low junction capacitance due to its small dielectric constant [5, 6]. In these devices a layer of SiGe may exist between the strined-Si layer and insulator (strained Si-on-SiGe-on-insulator, SGOI) [6] or the strained-Si layer can be directly on top of the insulator [7]. Latter is advantageous for eliminating some of the key problems associated with the fabrication of SGOI.

Advanced SiGe-free Strained Si on Insulator Substrates: Thermal Stability and Carrier Mobility Enhancement

2003 ◽  
Author(s):  
T. A. Langdo ◽  
M. Erdtmann ◽  
C. W. Leitz ◽  
M. T. Currie ◽  
A. Lochtefeld ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Carrier Mobility ◽  
Strained Si

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

2010 ◽  
Vol 663-665 ◽  
pp. 470-472 ◽  
Author(s):  
Jian Jun Song ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xian Ying Dai ◽  
Rong Xi Xuan
Keyword(s):  
Band Structure ◽  
Carrier Concentration ◽  
Device Physics ◽  
Strained Si ◽  
Intrinsic Carrier Concentration ◽  
Materials Properties ◽  
Densities Of States ◽  
Valence Bands

The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.

Band structure ofAI/Si/n-type GaAs with a strained Si interfacial layer

1996 ◽  
Vol 53 (7) ◽  
pp. 3879-3884 ◽  
Author(s):  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Band Structure ◽  
Interfacial Layer ◽  
Strained Si

Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering

Nano Letters ◽  
2015 ◽  
Vol 15 (11) ◽  
pp. 7204-7210 ◽  
Author(s):  
J. W. Ma ◽  
W. J. Lee ◽  
J. M. Bae ◽  
K. S. Jeong ◽  
S. H. Oh ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Surface Defect ◽  
Defect Engineering ◽  
Strained Si

scholarly journals E-kRelation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Zhang Chao ◽  
Xu Da-Qing ◽  
Liu Shu-Lin ◽  
Liu Ning-Zhuang
Keyword(s):  
Valence Band ◽  
Theoretical Basis ◽  
Carrier Mobility ◽  
Energy Levels ◽  
Hole Mobility ◽  
Strained Si ◽  
Effective Masses ◽  
Splitting Energy ◽  
Analytic Models ◽  
Strained Materials

Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. TheE-krelation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, theE-krelation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.

Epitaxial Semiconducting and Metallic Iron Silicides

1993 ◽  
Vol 320 ◽  
Author(s):  
H. Von KÄNel ◽  
U. Kafader ◽  
P. Sutter ◽  
N. Onda ◽  
H. Sirringhaus ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Metallic Iron ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Molecular Beam ◽  
Significant Contribution ◽  
Majority Carrier ◽  
Iron Silicides

ABSTRACTWe discuss the properties of semiconducting iron silicides, grown epitaxially on Si(001) and Si(111) by molecular beam epitaxy. The growth on Si (111) involves phase transitions from epitaxially stabilized metallic phases, leading to larger epitaxial β-FeSi2 grains than most other deposition procedures. The structural and electric properties of β-FeSi2/Si(001) are improved considerably for growth temperatures above 650 °C. Hall mobilities of p—conducting films reach values up to 600 cm2/Vsec at 100 K, at carrier densities below 1017 cm−3. Despite of the high majority carrier mobility and low carrier density, the photoelectric response of p-β-FeSi2/n-Si(001) diodes does not yield any significant contribution from the silicide, however, in accordance with the expected band structure diagram.

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