Epitaxial Semiconducting and Metallic Iron Silicides

1993 ◽  
Vol 320 ◽  
Author(s):  
H. Von KÄNel ◽  
U. Kafader ◽  
P. Sutter ◽  
N. Onda ◽  
H. Sirringhaus ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Metallic Iron ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Molecular Beam ◽  
Significant Contribution ◽  
Majority Carrier ◽  
Iron Silicides

ABSTRACTWe discuss the properties of semiconducting iron silicides, grown epitaxially on Si(001) and Si(111) by molecular beam epitaxy. The growth on Si (111) involves phase transitions from epitaxially stabilized metallic phases, leading to larger epitaxial β-FeSi2 grains than most other deposition procedures. The structural and electric properties of β-FeSi2/Si(001) are improved considerably for growth temperatures above 650 °C. Hall mobilities of p—conducting films reach values up to 600 cm2/Vsec at 100 K, at carrier densities below 1017 cm−3. Despite of the high majority carrier mobility and low carrier density, the photoelectric response of p-β-FeSi2/n-Si(001) diodes does not yield any significant contribution from the silicide, however, in accordance with the expected band structure diagram.

scholarly journals Comparison of band structure calculations and photoluminescence experiments on HgTe/CdTe superlattices grown by molecular beam epitaxy

1992 ◽  
Vol 71 (11) ◽  
pp. 5610-5613 ◽  
Author(s):  
M. M. Kraus ◽  
M. M. Regnet ◽  
C. R. Becker ◽  
R. N. Bicknell‐Tassius ◽  
G. Landwehr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Molecular Beam ◽  
Band Structure Calculations ◽  
Structure Calculations

COMPARISON OF DONOR AND ACCEPTOR LEVELS IN UNDOPED, HIGH QUALITY β-FeSi2 FILMS GROWN BY MBE AND MULTI-LAYER METHOD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4314-4317 ◽  
Author(s):  
K. TAKAKURA ◽  
N. SEKI ◽  
T. SUEMASU ◽  
F. HASEGAWA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Carrier Density ◽  
Molecular Beam ◽  
High Quality ◽  
Layer Method ◽  
Donor And Acceptor ◽  
P Type

The carrier density of highly [100]-oriented β- FeSi 2 films grown by molecular beam epitaxy (MBE) was smaller than that by the multilayer method. For the MBE grown, undoped n- and p-type β- FeSi 2 films, only one donor (E D1 = 0.21 eV) and one acceptor (E A2 = 0.11 eV) levels were obtained from the temperature dependence of the carrier density, in contrast with the fact that two kinds of donor (E D1 = 0.21 eV and E D2 = 0.08 eV) and acceptor (E A1 = 0.19 eV and E A2 = 0.11 eV) levels were obtained for layers grown by multi-layer method. These results suggest that the decrease of the carrier density in the MBE-grown films is due to disappearance of the E D2 or E A1 level.

Temperature dependence of transport properties of InN films

2005 ◽  
Vol 892 ◽  
Author(s):  
J.S. Thakur ◽  
R. Naik ◽  
Vaman M Naik ◽  
D. Haddad ◽  
G.W. Auner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Electron Scattering ◽  
Carrier Density ◽  
Molecular Beam ◽  
Plasma Source ◽  
Large Temperature ◽  
Independent Mobility ◽  
Donor Acceptor ◽  
High Carrier

AbstractThe temperature dependence of Hall mobility, µ, and carrier density, Ne, for thin InN films grown by Molecular Beam Epitaxy and Plasma Source Molecular Beam Epitaxy have been investigated. For temperature up to 300 K, a large temperature-independent Ne is observed in films grown by the above two techniques. However, for higher temperatures, carrier density (Ne) increases with temperature. The characteristic behavior of the mobility for the films with low carrier density is different from that of the high carrier density film, particularly at low temperatures. The low carrier density film shows a peak ∼250 K in mobility as a function of temperature which is contrast to the temperature independent mobility observed for the high density film for T < 300 K. We have investigated theoretically the effect of concentration of donor, acceptor, and threading dislocations on the carrier mobility in these films. Various electron-scattering mechanisms for the mobility in these films have been discussed.

A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy

2001 ◽  
Vol 230 (3-4) ◽  
pp. 415-420 ◽  
Author(s):  
S. Marlafeka ◽  
N. Bock ◽  
T.S. Cheng ◽  
S.V. Novikov ◽  
A.J. Winser ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Structural Study ◽  
Molecular Beam

Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy

1998 ◽  
Vol 42 (5) ◽  
pp. 839-847 ◽  
Author(s):  
H. Tang ◽  
W. Kim ◽  
A. Botchkarev ◽  
G. Popovici ◽  
F. Hamdani ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Mobility ◽  
Molecular Beam ◽  
Si Doped

Phase transitions of thin films grown by molecular beam epitaxy

1997 ◽  
Vol 9 (14) ◽  
pp. 2851-2857 ◽  
Author(s):  
Y Yoneda ◽  
K Sakaue ◽  
T Terauchi
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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