scholarly journals High-mobility field-effect transistors based on transition metal dichalcogenides

2004 ◽  
Vol 84 (17) ◽  
pp. 3301-3303 ◽  
Author(s):  
V. Podzorov ◽  
M. E. Gershenson ◽  
Ch. Kloc ◽  
R. Zeis ◽  
E. Bucher
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Metal Dichalcogenides

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides
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