scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

2019 ◽  
Vol 7 (13) ◽  
pp. 7430-7436 ◽  
Author(s):  
Kai Wu ◽  
Huanhuan Ma ◽  
Yunzhi Gao ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Charge Separation ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Heterojunction Solar Cells ◽  
Highly Efficient ◽  
Metal Dichalcogenides

Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17746-17753
Author(s):  
Xiangjun Liu ◽  
Zhi Gen Yu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Robust Control ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Migration ◽  
Transition Metal Dichalcogenides ◽  
Grain Boundary Migration ◽  
Two Dimensional ◽  
Defect Healing ◽  
Metal Dichalcogenides ◽  
Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution.

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

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