Core-level photoemission and near-edge x-ray absorption fine-structure studies of GaN surface under low-energy ion bombardment

2004 ◽  
Vol 95 (10) ◽  
pp. 5487-5493 ◽  
Author(s):  
Mladen Petravic ◽  
Prakash N. K. Deenapanray ◽  
Victoria A. Coleman ◽  
Ki-jeong Kim ◽  
Bongsoo Kim ◽  
...  
Keyword(s):  
Fine Structure ◽  
Ion Bombardment ◽  
Core Level ◽  
Low Energy ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment

2006 ◽  
Vol 252 (10) ◽  
pp. 3413-3416 ◽  
Author(s):  
V.A. Coleman ◽  
M. Petravić ◽  
K.-J. Kim ◽  
B. Kim ◽  
G. Li
Keyword(s):  
Fine Structure ◽  
Ion Bombardment ◽  
Low Energy ◽  
X Ray ◽  
Absorption Fine ◽  
Nitrogen Ion ◽  
X Ray Absorption

Structure of Prototypical Semiconductor Surfaces and Interfaces Investigated by Photoemission Extended X-Ray Absorption Fine Structure (PEXAFS)

1998 ◽  
Vol 05 (05) ◽  
pp. 1057-1086 ◽  
Author(s):  
P. S. Mangat ◽  
P. Soukiassian
Keyword(s):  
Fine Structure ◽  
Alkali Metals ◽  
Structural Changes ◽  
Core Level ◽  
Level Shift ◽  
Semiconductor Surfaces ◽  
X Ray ◽  
Absorption Fine ◽  
Surfaces And Interfaces ◽  
X Ray Absorption

Extended X-ray absorption fine structure (EXAFS) has been known for half a century. However, using synchrotron radiation, it has developed into a powerful tool for determining the atomic structure of a wide variety of surfaces and interfaces. The power of this technique lies in its sensitivity to the local environment of a particular element. Photoemission extended X-ray absorption fine structure (PEXAFS) is a new variation of electron detection surface EXAFS (SEXAFS) using photoemission spectroscopy in the constant initial state mode, Due to small escape depths, a very high surface sensitivity is achieved. Other major advantages of this new technique include (i) an improved signal/noise ratio allowing very short data collection times, which is an especially useful feature for short lifetime surfaces, and (ii) double-checking interatomic distances. Combined with core level and valence band photoemission spectroscopies. PEXAFS provides the exceptional ability to probe the atomic geometry and the electronic structure at the same time and for the same surface. It thus gives access to important issues, such as (i) surface reconstruction and/or relaxation, (ii) bonding nature, (iii) adsorption site and (iv) initial interface formation. Furthermore, it could be used to clarify photoemission core level shift origin by allowing one to discriminate structural changes from other causes as initial or final state effects. This article reviews the latest PEXAFS investigations for model elemental (silicon) and compound (indium phosphide) semiconductor surfaces and their interfaces with alkali metals, antimony, aluminum, bismuth and silver.

Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies

2006 ◽  
Vol 600 (7) ◽  
pp. L81-L85 ◽  
Author(s):  
M. Petravic ◽  
P.N.K. Deenapanray ◽  
V.A. Coleman ◽  
C. Jagadish ◽  
K.-J. Kim ◽  
...  
Keyword(s):  
Fine Structure ◽  
Core Level ◽  
X Ray ◽  
Absorption Fine ◽  
Chemical States ◽  
X Ray Absorption
Sign in / Sign up

Export Citation Format

Share Document