Determination of Low Barrier Heights in Metal‐Semiconductor Contacts

1970 ◽  
Vol 41 (11) ◽  
pp. 4669-4671 ◽  
Author(s):  
W. Tantraporn
Keyword(s):  
Barrier Heights ◽  
Semiconductor Contacts

Acoustic determination of depletion depth in metal-semiconductor contacts

1979 ◽  
Vol 50 (8) ◽  
pp. 5539 ◽  
Author(s):  
K. Fossheim ◽  
R. M. Holt ◽  
A. M. Raaen
Keyword(s):  
Depletion Depth ◽  
Semiconductor Contacts

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

An accurate determination of barrier heights at the HfO2∕Si interfaces

2004 ◽  
Vol 96 (5) ◽  
pp. 2701-2707 ◽  
Author(s):  
Ragesh Puthenkovilakam ◽  
Jane P. Chang
Keyword(s):  
Accurate Determination ◽  
Barrier Heights

HOW CAN ONE SYNTHESIZE THE ELEMENT Z = 120?

2010 ◽  
Vol 19 (04) ◽  
pp. 500-507 ◽  
Author(s):  
K. SIWEK-WILCZYŃSKA ◽  
T. CAP ◽  
J. WILCZYŃSKI
Keyword(s):  
Diffusion Model ◽  
Ground State ◽  
Shell Effects ◽  
Barrier Heights ◽  
Fission Barriers

Predictions based on the "Fusion by Diffusion" model in a version adapted for calculating xn channels, with the ground-state masses, shell effects and barrier heights as given by Muntian, Patyk and Sobiczewski are presented. Sensitivity of the model to uncertainties in determination of the theoretical fission barriers is discussed. Predictions concerning formation of the element Z = 120 include comparison of fusion of the most asymmetric systems, 50 Ti + 249 Cf and 54 Cr + 248 Cm , with less asymmetric combinations 58 Fe + 244 Pu and 64 Ni + 238 U .

Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts

Vacuum ◽  
2002 ◽  
Vol 67 (1) ◽  
pp. 101-113 ◽  
Author(s):  
Dietrich R.T. Zahn ◽  
Sunggook Park ◽  
Thorsten U. Kampen
Keyword(s):  
Schottky Barrier ◽  
Organic Modification ◽  
Barrier Heights ◽  
Semiconductor Contacts

A study of hydrogen abstraction reactions by halogen atoms with HFCO and HClCO: determination of transition state structures, barrier heights, and vibrational frequencies

1993 ◽  
Vol 71 (1) ◽  
pp. 135-140 ◽  
Author(s):  
J. S. Francisco ◽  
N. Mina-Camilde
Keyword(s):  
Transition State ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Chlorine Atom ◽  
Fluorine Atom ◽  
Hydrogen Abstraction ◽  
Barrier Heights ◽  
Optimized Geometries ◽  
Good Agreement

Theoretical barriers and reaction energetics were determined using ab initio calculations at the PMP4/6-311 + +G** level with UMP2/6-311G** optimized geometries for hydrogen abstraction reactions of HFCO and HClCO by fluorine and chlorine atoms. The largest barriers are predicted for fluorine and chlorine atom abstractions of hydrogen from HFCO. Fluorine and chlorine atom abstractions of hydrogen from HClCO are predicted to be barrierless. The predicted barrier for fluorine atom abstraction of hydrogen from HFCO is calculated to be 1.3 kcal mol−1 and is in good agreement with the experimental value of 1.8 ± 0.4 kcal mol−1.

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