Effect of Heat Treatment on the 1.370 eV Photoluminescence Emission Band in Zn‐Doped GaAs

1968 ◽  
Vol 39 (9) ◽  
pp. 4307-4312 ◽  
Author(s):  
C. J. Hwang
Keyword(s):  
Heat Treatment ◽  
Emission Band ◽  
Photoluminescence Emission

scholarly journals Effect of Pressure-Assisted Heat Treatment on Photoluminescence Emission of α-Bi2O3 Needles

2015 ◽  
Vol 54 (21) ◽  
pp. 10184-10191 ◽  
Author(s):  
Samara Schmidt ◽  
Evaldo T. Kubaski ◽  
Diogo P. Volanti ◽  
Thiago Sequinel ◽  
Vinicius Danilo N. Bezzon ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Photoluminescence Emission ◽  
Effect Of Pressure

scholarly journals Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 241
Author(s):  
Alexey Kuznetsov ◽  
Prithu Roy ◽  
Valeriy M. Kondratev ◽  
Vladimir V. Fedorov ◽  
Konstantin P. Kotlyar ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Refractive Index ◽  
Emission Band ◽  
Resonant Cavity ◽  
High Refractive Index ◽  
Photonic Devices ◽  
Numerical Calculations ◽  
Proper Choice ◽  
Photoluminescence Emission ◽  
Fabry Perot

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.

Cyclic MAM Synthesis of CaMoO4:Er3+/Yb3+ Particles and their Upconversion Photoluminescence Properties

2013 ◽  
Vol 804 ◽  
pp. 36-41
Author(s):  
Chang Sung Lim
Keyword(s):  
Heat Treatment ◽  
Raman Spectra ◽  
Emission Band ◽  
Particle Sizes ◽  
Photoluminescence Properties ◽  
Microwave Assisted ◽  
Upconversion Photoluminescence ◽  
Co Doped

Er3+doped CaMoO4(CaMoO4:Er3+) and Er3+/Yb3+co-doped CaMoO4(CaMoO4:Er3+/Yb3+) particles was successfully synthesized by a cyclic microwave-assisted metathetic (MAM) method, followed by heat-treatment. Well-crystallized UC CaMoO4:Er3+/Yb3+particles formed after heat-treatment at 600°C for 3 h showed a fine and homogeneous morphology with particle sizes of 1-3 μm. At excitation at 980 nm, CaMoO4:Er3+/Yb3+particles exhibited a strong 525-nm emission band and a weak 550-nm emission band in the green region, and a weak 655-nm emission band in the red region. The UC intensities of CaMoO4:Er3+/Yb3+particles were much higher than that of the CaMoO4:Er3+particles. The Raman spectra of CaMoO4:Er3+and CaMoO4:Er3+/Yb3+particles indicated the appearance of additional strong peaks in comparision with that of pure CaMoO4.

Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Alaya ◽  
M. A. Zaidi ◽  
G. Marrakchi ◽  
H. Maaref ◽  
H. J. Von Bardeleben ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Temperature Dependence ◽  
Electron Capture ◽  
Emission Band ◽  
Before And After ◽  
Franck Condon ◽  
Configuration Coordinate ◽  
Configuration Coordinate Diagram

AbstractCombined photoluminescence and DLTS investigations of semi-insulating and n-type GaAs before and after a 15min, 850°C heat treatment under AsH3 reveal that the treatment which anneals the EL6 center leads also to a disappearence of the O.8eV PL band. The suggested correlation between EL6 and the O.8eV PL is confirmed by the determination of the electron capture barrier of EL6 and the Franck-Condon shift deduced from the temperature dependence of the PL band leading to a consistant Configuration Coordinate diagram of this defect.

The origin of the ∼0.75 eV photoluminescence emission band in ion‐implanted InP

1992 ◽  
Vol 71 (12) ◽  
pp. 6073-6078 ◽  
Author(s):  
T. D. Thompson ◽  
J. Barbara ◽  
M. C. Ridgway
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Ion Implanted

Influence of the GaAs crystals diffusion in the shift towards low energies in the photoluminescence emission band of the GaN/GaNbuffer/GaAs structure

2019 ◽  
Vol 88 ◽  
pp. 277-281 ◽  
Author(s):  
Erick Gastellóu ◽  
Crisoforo Morales ◽  
Godofredo García ◽  
Rafael García ◽  
Gustavo A. Hirata ◽  
...  
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Low Energies ◽  
Gaas Structure
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