Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

1993 ◽  
Vol 22 (12) ◽  
pp. 1441-1444 ◽  
Author(s):  
P. W. Yu ◽  
C. E. Stutz
Keyword(s):  
Heat Treatment ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Photoluminescence Emission

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

1996 ◽  
Vol 69 (3) ◽  
pp. 397-399 ◽  
Author(s):  
Albert Chin ◽  
W. J. Chen ◽  
F. Ganikhanov ◽  
G.‐R. Lin ◽  
Jia‐Min Shieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

1994 ◽  
Vol 49 (7) ◽  
pp. 4689-4694 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Robinson ◽  
J. R. Sizelove ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

1997 ◽  
Vol 40 (2) ◽  
pp. 214-218
Author(s):  
Nuofu Chen ◽  
Hongjia He ◽  
Yutian Wang ◽  
Lanying Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Molecular Beam

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Forward‐bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

1993 ◽  
Vol 63 (17) ◽  
pp. 2408-2410 ◽  
Author(s):  
H. Jorke ◽  
H. Kibbel ◽  
K. Strohm ◽  
E. Kasper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Forward Bias

Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

1992 ◽  
Vol 60 (24) ◽  
pp. 3007-3009 ◽  
Author(s):  
R. Enrique Viturro ◽  
Michael R. Melloch ◽  
Jerry M. Woodall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Optical Emission ◽  
Emission Properties

Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
W.M. Chen ◽  
I.A. Buyanova ◽  
A. Buyanov ◽  
W.G. Bi ◽  
C.W. Tu
Keyword(s):  
Electron Transfer ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Electron Gas ◽  
Shallow Donor ◽  
Modulation Doping ◽  
Gas Source ◽  
Shubnikov De Haas Oscillations ◽  
Lt Inp

AbstractWe propose and demonstrate a new doping approach, i.e. intrinsic doping, for n-type modulation doping in InP-based heterostructures. Instead of the conventional method of n-type doping by shallow donor impurities, grown-in intrinsic defects are utilized to provide the required doping without external doping sources. The success of this approach is clearly demonstrated by our results from InGaAs/InP heterostructures, where the required n-type doping in the InP barriers is provided by Pin antisites, preferably introduced during off-stoichiometric growth of InP at low temperatures (LT-InP) by gas source molecular beam epitaxy. A twodimensional electron gas (2DEG) is shown to be formed near the InGaAs/InP heterointerface as a result of electron transfer from the LT-InP to the InGaAs active layer, from studies of Shubnikov-de Haas oscillations and photoluminescence. The concentration of the 2DEG is determined to be as high as 1.15×1012 cm−2, where two subbands of the 2DEG are readily occupied.

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