The origin of the ∼0.75 eV photoluminescence emission band in ion‐implanted InP

1992 ◽  
Vol 71 (12) ◽  
pp. 6073-6078 ◽  
Author(s):  
T. D. Thompson ◽  
J. Barbara ◽  
M. C. Ridgway
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Ion Implanted

scholarly journals Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 241
Author(s):  
Alexey Kuznetsov ◽  
Prithu Roy ◽  
Valeriy M. Kondratev ◽  
Vladimir V. Fedorov ◽  
Konstantin P. Kotlyar ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Refractive Index ◽  
Emission Band ◽  
Resonant Cavity ◽  
High Refractive Index ◽  
Photonic Devices ◽  
Numerical Calculations ◽  
Proper Choice ◽  
Photoluminescence Emission ◽  
Fabry Perot

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.

Influence of the GaAs crystals diffusion in the shift towards low energies in the photoluminescence emission band of the GaN/GaNbuffer/GaAs structure

2019 ◽  
Vol 88 ◽  
pp. 277-281 ◽  
Author(s):  
Erick Gastellóu ◽  
Crisoforo Morales ◽  
Godofredo García ◽  
Rafael García ◽  
Gustavo A. Hirata ◽  
...  
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Low Energies ◽  
Gaas Structure

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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