Simultaneous micro-Raman and photoluminescence study of spark-processed germanium: Report on the origin of the orange photoluminescence emission band

2004 ◽  
Vol 95 (7) ◽  
pp. 3466-3472 ◽  
Author(s):  
G. Kartopu ◽  
S. C. Bayliss ◽  
R. E. Hummel ◽  
Y. Ekinci
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Photoluminescence Study

scholarly journals Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 241
Author(s):  
Alexey Kuznetsov ◽  
Prithu Roy ◽  
Valeriy M. Kondratev ◽  
Vladimir V. Fedorov ◽  
Konstantin P. Kotlyar ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Refractive Index ◽  
Emission Band ◽  
Resonant Cavity ◽  
High Refractive Index ◽  
Photonic Devices ◽  
Numerical Calculations ◽  
Proper Choice ◽  
Photoluminescence Emission ◽  
Fabry Perot

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.

The origin of the ∼0.75 eV photoluminescence emission band in ion‐implanted InP

1992 ◽  
Vol 71 (12) ◽  
pp. 6073-6078 ◽  
Author(s):  
T. D. Thompson ◽  
J. Barbara ◽  
M. C. Ridgway
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Ion Implanted

Influence of the GaAs crystals diffusion in the shift towards low energies in the photoluminescence emission band of the GaN/GaNbuffer/GaAs structure

2019 ◽  
Vol 88 ◽  
pp. 277-281 ◽  
Author(s):  
Erick Gastellóu ◽  
Crisoforo Morales ◽  
Godofredo García ◽  
Rafael García ◽  
Gustavo A. Hirata ◽  
...  
Keyword(s):  
Emission Band ◽  
Photoluminescence Emission ◽  
Low Energies ◽  
Gaas Structure

scholarly journals Detailed photoluminescence study of Cu2Ge(SSe)3 microcrystals

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085105
Author(s):  
J. Krustok ◽  
R. Kaupmees ◽  
X. Li ◽  
M. Kauk-Kuusik ◽  
M. Grossberg
Keyword(s):  
Photoluminescence Study

Highly thermally stable Cr3+ and Yb3+ codoped Gd2GaSbO7 phosphors for broadband near-infrared applications

2021 ◽  
Author(s):  
xiudi wu ◽  
shuang zhao ◽  
Liang Zhang ◽  
Langping Dong ◽  
Yonghui Xu ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Emission Band ◽  
Near Infrared ◽  
Thermally Stable ◽  
Nir Emission

Abstract：Gd2GaSbO7:Cr3+,Yb3+ phosphors with efficient broadband NIR emission were prepared by solid-state reaction. Under the excitation of 448 nm, Gd2GaSbO7:Cr3+ (GGS:Cr3+) phosphor exhibits a broadband NIR emission band centered at approximately...

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