Core‐level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high‐resolution x‐ray photoelectron spectroscopy

1995 ◽  
Vol 67 (14) ◽  
pp. 2049-2051 ◽  
Author(s):  
C. H. Bjorkman ◽  
J. L. Alay ◽  
H. Nishimura ◽  
M. Fukuda ◽  
T. Yamazaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
X Ray ◽  
Chemically Treated ◽  
Level Shifts

X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100): A model for N 1s core-level shifts in silicon oxynitride films

2004 ◽  
Vol 95 (4) ◽  
pp. 1963-1968 ◽  
Author(s):  
J. Eng ◽  
I. A. Hubner ◽  
J. Barriocanal ◽  
R. L. Opila ◽  
D. J. Doren
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Oxynitride ◽  
X Ray ◽  
Level Shifts

Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

2020 ◽  
Vol 52 (12) ◽  
pp. 933-938
Author(s):  
Oleksandr Romanyuk ◽  
Oliver Supplie ◽  
Agnieszka Paszuk ◽  
Jan Philipp Stoeckmann ◽  
Regan George Wilks ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Spectroscopy Study ◽  
X Ray ◽  
Level Shifts

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Core Level ◽  
Band Alignment ◽  
X Ray ◽  
Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Elucidating the Many-Body Effect and Anomalous Pt and Ni Core Level Shifts in X-ray Photoelectron Spectroscopy of Pt–Ni Alloys

2020 ◽  
Vol 124 (4) ◽  
pp. 2313-2318 ◽  
Author(s):  
Jiatang Chen ◽  
Yun Mui Yiu ◽  
Zhiqiang Wang ◽  
Danielle Covelli ◽  
Ramaswami Sammynaiken ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Many Body ◽  
Body Effect ◽  
X Ray ◽  
Ni Alloys ◽  
Level Shifts ◽  
The Many

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY AT THE Cu/Ru(0001) INTERFACE

2002 ◽  
Vol 09 (02) ◽  
pp. 723-727 ◽  
Author(s):  
T. H. ANDERSEN ◽  
L. BECH ◽  
J. ONSGAARD ◽  
S. V. HOFFMANN ◽  
Z. LI
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Energy Shift ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Copper Adsorption ◽  
X Ray ◽  
Level Shifts ◽  
Binding Energy Shift

Copper adsorption on Ru(0001) has been studied by synchrotron radiation. The clean Ru 3d 5/2 spectra were found to consist of two components with a binding energy shift of 400 meV. The component with the lower binding energy represents the first layer of ruthenium atoms. Adsorption of copper gives rise to core level shifts of the Ru 3d 5/2 components, which were studied as a function of Cu coverage. Experiments were carried out with copper coverages varying from the submonolayer range up to two monolayers of copper. The binding energy of the Cu 2p 3/2 level was measured by X-ray photoemission spectroscopy.

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