Plasma etching and hydrogen blocking characteristics of PtOx thin films in ferroelectric capacitor fabrication

2003 ◽  
Vol 83 (15) ◽  
pp. 3147-3149 ◽  
Author(s):  
Chun-Kai Huang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Ferroelectric Capacitor ◽  
Capacitor Fabrication

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

Nanometer-sized patterning of polysilicon thin films by high density plasma etching

2004 ◽  
Vol 467 (1-2) ◽  
pp. 172-175 ◽  
Author(s):  
Young Soo Song ◽  
Jung Woo Kim ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Density Plasma

Crosslinking and Ciiain-Scission of Photosensitive Polyimidesiloxane Under Deep UV Irradiation

1990 ◽  
Vol 203 ◽  
Author(s):  
S. Jeng ◽  
M. Xu ◽  
H. S. Kwok ◽  
D. Y. Tang ◽  
H. R. Acharya ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Plasma Etching ◽  
Chain Scission ◽  
Low Dielectric Constant ◽  
Contact Mode ◽  
Low Dielectric ◽  
Oxygen Plasma Etching ◽  
Multi Level ◽  
193 Nm

ABSTRACTPolyimides are considered as promising packaging materials in multi-layer interconnections and multi-chip modules because of their low dielectric constant and good planarizability. Photosensitive polyimidesiloxane (SIM2000XL) as a newly emerging polyimide is showing not only similar properties as conventional polyimides but also the advantages of process simplification and improved adhesion. Moreover, it is proposed that SIM2000XL can be an oxygen-plasma etching barrier in multi-level lithographic systems because of its high silicon content.We characterized the photosensitivity of SIM2000XL thin films under excimer laser (193 nm) exposure. The sensitivity of SIM2000XL was found to be about 20 mJ/cm2. After the SIM2000XL thin films were exposed through a photomask in the contact mode, development gave the usual negative patterns. However, the remained film thickness after exposure reached a maximum of about 65 % of the initial film thickness and decreased with further irradiation. This can be attributed to the competing processes of polymer crosslinkage and chain-scission. This phenomenon is important for applications of polymers in DUV lithography. A detailed study of these two competing processes are presented.

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

ECR plasma etching of chemically vapour deposited diamond thin films

1992 ◽  
Vol 28 (9) ◽  
pp. 822 ◽  
Author(s):  
S.J. Pearton ◽  
A. Katz ◽  
F. Ren ◽  
J.R. Lothian
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Ecr Plasma Etching
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