ECR plasma etching of chemically vapour deposited diamond thin films

1992 ◽  
Vol 28 (9) ◽  
pp. 822 ◽  
Author(s):  
S.J. Pearton ◽  
A. Katz ◽  
F. Ren ◽  
J.R. Lothian
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Ecr Plasma Etching

ECR Plasma Etching with Heavy Halogen Ions

1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2223-2228 ◽  
Author(s):  
Nobuo Fujiwara ◽  
Hisaharu Sawai ◽  
Masahiro Yoneda ◽  
Kyusaku Nishioka ◽  
Haruhiko Abe
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching

Anisotropic ECR Plasma Etching with Low-Energy Ions

1993 ◽  
Vol 140-142 ◽  
pp. 39-54
Author(s):  
Y. Tobinaga ◽  
T. Miyano ◽  
K. Fujimoto ◽  
M. Fujito ◽  
H. Fujiwara
Keyword(s):  
Plasma Etching ◽  
Low Energy ◽  
Ecr Plasma ◽  
Low Energy Ions ◽  
Ecr Plasma Etching

Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

Dry Etching of InGaP and AlInP in CH4/H2/Ar

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. J. Santana ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Flow ◽  
Flow Rates ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Rates ◽  
Ecr Plasma Etching

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs

1995 ◽  
Vol 31 (10) ◽  
pp. 834-836 ◽  
Author(s):  
J.G. van Hassel ◽  
C.M. van Es ◽  
P.A.M. Nouwens
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching

ECR plasma etching of GaAs in CCl2F2/Ar/O2 discharge and IR studies of the etched surface

2005 ◽  
Vol 5 (4) ◽  
pp. 351-355 ◽  
Author(s):  
L.S.S. Singh ◽  
K.P. Tiwary ◽  
R.K. Purohit ◽  
Z.H. Zaidi ◽  
M. Husain
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ir Studies ◽  
Etched Surface ◽  
Ecr Plasma Etching

scholarly journals E-2-5 Plasma Resistant Evaluation of Photoresist Treated by Vacuum UV Cure Process in ECR Plasma Etching

2014 ◽  
Vol 2014 (0) ◽  
pp. _E-2-5-1_-_E-2-5-3_
Author(s):  
Haruyosi HAMA ◽  
Kyohei TERAO ◽  
Hidekuni TAKAO ◽  
Fusao SIMOKAWA ◽  
Fumikazu OOHIRA ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cure Process ◽  
Ecr Plasma ◽  
Vacuum Uv ◽  
Ecr Plasma Etching

240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry

2001 ◽  
Author(s):  
Naoyuki Kofuji ◽  
Takashi Tsutsumi ◽  
Eiji Matsumoto ◽  
Kotaro Fujimoto ◽  
Naoshi Itabashi ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Gas Chemistry ◽  
Aluminum Interconnects ◽  
Ecr Plasma Etching
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