2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
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Published By IEEE

9781509030835

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Impedance characterisation of NiO based gas sensor

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805918 ◽

2016 ◽

Author(s):

M. Mikolasek ◽

M. Predanocy ◽

P. Jom ◽

I. Hotovy

Keyword(s):

Gas Sensor

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Impact of repetitive UIS on modern GaN power devices

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805923 ◽

2016 ◽

Cited By ~ 6

Author(s):

Juraj Marek ◽

Lubica Stuchlikova ◽

Martin Jagelka ◽

Ales Chvala ◽

Patrik Pribytny ◽

...

Keyword(s):

Power Devices

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Investigation of metal contacts on semi-insulating GaAs: Physics, technology and applications

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805934 ◽

2016 ◽

Author(s):

F. Dubecky ◽

G. Vanko ◽

D. Kindl ◽

P. Hubik ◽

E. Gombia ◽

...

Keyword(s):

Metal Contacts

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InGaN mesoscopic structures for low energy consumption nano-opto-electronics

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805897 ◽

2016 ◽

Author(s):

H. Luth ◽

M. Mikulics ◽

A. Winden ◽

St. Trellenkamp ◽

Z. Sofer ◽

...

Keyword(s):

Energy Consumption ◽

Low Energy ◽

Low Energy Consumption

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Threshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: Relation to distribution of oxide/semiconductor interface state density

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805881 ◽

2016 ◽

Author(s):

M. Tapajna ◽

L. Valik ◽

D. Gregusova ◽

K. Frohlich ◽

F. Gucmann ◽

...

Keyword(s):

Threshold Voltage ◽

Gate Dielectrics ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Interface

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Evaluation of TIGBT field stop layer generated by helium implantation

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805938 ◽

2016 ◽

Author(s):

Radim Pechal ◽

Lubomir Dornak ◽

Juraj Vavro ◽

Adam Kozelsky ◽

Adam Klimsza

Keyword(s):

Helium Implantation

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DLTFS study of InGaAs/AlInAs heterostructures grown on n-InP:S substrates

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805917 ◽

2016 ◽

Cited By ~ 1

Author(s):

A. Kosa ◽

L. Stuchlikova ◽

L. Harmatha ◽

J. Kovac ◽

M. Badura ◽

...

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Multi-bit adder design using ME-MTJ technology

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805902 ◽

2016 ◽

Cited By ~ 2

Author(s):

Nishtha Sharma ◽

Andrew Marshall ◽

Jonathan Bird ◽

Peter Dowben

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Nanocrystalline diamond films for electronic monitoring of gas and organic molecules

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805928 ◽

2016 ◽

Author(s):

A. Kromka ◽

T. Izak ◽

M. Davydova ◽

B. Rezek

Keyword(s):

Organic Molecules ◽

Electronic Monitoring ◽

Diamond Films ◽

Nanocrystalline Diamond ◽

Nanocrystalline Diamond Films

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The influence of ozone pre-treatment in HfO2-based resistive switching memory structures

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) ◽

10.1109/asdam.2016.7805940 ◽

2016 ◽

Author(s):

P. Benko ◽

M. Mikolasek ◽

L. Harmatha ◽

K. Frohlich

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Pre Treatment ◽

Switching Memory ◽

Memory Structures

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2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Impedance characterisation of NiO based gas sensor

Impact of repetitive UIS on modern GaN power devices

Investigation of metal contacts on semi-insulating GaAs: Physics, technology and applications

InGaN mesoscopic structures for low energy consumption nano-opto-electronics

Threshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: Relation to distribution of oxide/semiconductor interface state density

Evaluation of TIGBT field stop layer generated by helium implantation

DLTFS study of InGaAs/AlInAs heterostructures grown on n-InP:S substrates

Multi-bit adder design using ME-MTJ technology

Nanocrystalline diamond films for electronic monitoring of gas and organic molecules

The influence of ozone pre-treatment in HfO2-based resistive switching memory structures

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
Latest Publications