Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

2003 ◽  
Vol 83 (4) ◽  
pp. 701-703 ◽  
Author(s):  
Kee-Youn Jang ◽  
Takeyoshi Sugaya ◽  
Cheol-Koo Hahn ◽  
Mutsuo Ogura ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Gate Length

Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

2005 ◽  
Vol 97 (3) ◽  
pp. 034507 ◽  
Author(s):  
Takeyoshi Sugaya ◽  
Kee-Youn Jang ◽  
Cheol-Koo Hahn ◽  
Mutsuo Ogura ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Current Ratio

Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide

ACS Nano ◽  
2010 ◽  
Vol 4 (6) ◽  
pp. 3356-3362 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Ville Kotimäki ◽  
Päivi Törmä
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Differential Resistance
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