Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide

ACS Nano ◽  
2010 ◽  
Vol 4 (6) ◽  
pp. 3356-3362 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Ville Kotimäki ◽  
Päivi Törmä
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Differential Resistance

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

2003 ◽  
Vol 83 (4) ◽  
pp. 701-703 ◽  
Author(s):  
Kee-Youn Jang ◽  
Takeyoshi Sugaya ◽  
Cheol-Koo Hahn ◽  
Mutsuo Ogura ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Gate Length

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 620-625 ◽  
Author(s):  
Pankaj Sharma ◽  
Laurent Syavoch Bernard ◽  
Antonios Bazigos ◽  
Arnaud Magrez ◽  
Adrian M. Ionescu
Keyword(s):  
Negative Differential Resistance ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Differential Resistance

Negative differential resistance in graphene nanoribbon superlattice field-effect transistors

2015 ◽  
Vol 10 (8) ◽  
pp. 400-403 ◽  
Author(s):  
Sheng Chang ◽  
Lei Zhao ◽  
Yawei Lv ◽  
Hao Wang ◽  
Jin He ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Graphene Nanoribbon
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