Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

2003 ◽  
Vol 82 (25) ◽  
pp. 4486-4488 ◽  
Author(s):  
Soo-Hyun Kim ◽  
Su Suk Oh ◽  
Ki-Bum Kim ◽  
Dae-Hwan Kang ◽  
Wei-Min Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Copper Metallization

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Atomic layer deposited Mo2N thin films using Mo(CO)6 and NH3 plasma as a Cu diffusion barrier

2021 ◽  
Vol 858 ◽  
pp. 158314
Author(s):  
Yong-Hwan Joo ◽  
Dip K. Nandi ◽  
Rahul Ramesh ◽  
Yujin Jang ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Diffusion Barrier

Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

2013 ◽  
Vol 546 ◽  
pp. 2-8 ◽  
Author(s):  
Seungmin Yeo ◽  
Sang-Hyeok Choi ◽  
Ji-Yoon Park ◽  
Soo-Hyun Kim ◽  
Taehoon Cheon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Copper Metallization ◽  
Layer Deposition

Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures

2012 ◽  
Vol 60 (10) ◽  
pp. 1521-1525
Author(s):  
Sang In Song ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Hong Kee Lee
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect

2014 ◽  
Vol 562 ◽  
pp. 118-125 ◽  
Author(s):  
Ki-Yeung Mun ◽  
Tae Eun Hong ◽  
Taehoon Cheon ◽  
Yujin Jang ◽  
Byoung-Yong Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Nitrogen Incorporation ◽  
Cu Interconnect
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