Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals

2003 ◽  
Vol 82 (15) ◽  
pp. 2527-2529 ◽  
Author(s):  
Jae Kwon Kim ◽  
Hea Jeong Cheong ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
Hong Jun Bark ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Oxide Semiconductor ◽  
Annealing Effect ◽  
Oxide Semiconductor ◽  
Charge Loss ◽  
Ge Nanocrystals

Wet thermal annealing effect on TaN/HfO 2 /Ge metal—oxide—semiconductor capacitors with and without a GeO 2 passivation layer

2012 ◽  
Vol 21 (11) ◽  
pp. 117701 ◽  
Author(s):  
Guan-Zhou Liu ◽  
Cheng Li ◽  
Chang-Bao Lu ◽  
Rui-Fan Tang ◽  
Meng-Rao Tang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thermal Annealing ◽  
Metal Oxide Semiconductor ◽  
Annealing Effect ◽  
Passivation Layer ◽  
Oxide Semiconductor

Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer

2010 ◽  
Vol 157 (11) ◽  
pp. H1019 ◽  
Author(s):  
Ming-Lun Lee ◽  
T. S. Mue ◽  
J. K. Sheu ◽  
K. H. Chang ◽  
S. J. Tu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thermal Annealing ◽  
Gallium Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Layer
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