Properties of amorphous GaNx prepared by ion beam assisted deposition at room temperature

2003 ◽  
Vol 93 (7) ◽  
pp. 3954-3962 ◽  
Author(s):  
Yixiu Kang ◽  
David C. Ingram
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Thermal Annealing Behavior of Si-DLC Ibad Coatings

1996 ◽  
Vol 438 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
L. C. Sengupta ◽  
J. K. Hirvonen
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Annealing Behavior ◽  
Ion Beam Assisted Deposition ◽  
Disk Friction ◽  
Knoop Microhardness ◽  
Absorption Features

AbstractAmorphous, 700 nm thick, diamond-like carbon coatings containing silicon (Si-DLC), farmed by Ar+ ion beam assisted deposition (IBAD) on silicon substrates, were annealed in air at temperatures ranging from room temperature to 600°C for 30 minutes. RBS analysis showed that the composition of the films remained the same up to 200°C, but at higher temperatures the Si-DLC coatings began to oxidize at the outer surface of the coating, forming a surface layer of SiO2. After in-air annealing at 600°C the coating had been completely converted to SiO2, with no trace of carbon seen by RBS. FTIR spectra of the unannealed coatings showed a very broad mode typical of Si-DLC bonding as well as some absorption features associated with Si and SiO2. Above 200°C the transmission mode shifted to higher frequencies which may be caused by the growth of SiO2 and the decrease of the Si-DLC film thickness. The room temperature ball-on-disk friction coefficient of the coating against a 1/2′′ diameter 440 C steel ball at 1 N load ranged from 0.2 for the original coating up to 0.5 after a 100° anneal and returned to 0.2 after annealing at 200–400°C and fell to 0.12 after a 500°C exposure. The average Knoop microhardness (uncorrected for substrate effects) was 10 GPa (1,000 KHN) for coatings annealed at temperatures as high as 400°C. All coatings up to 500 °C passed the qualitative “Scotch Tape” test.

Synthesis of nanometre multi-layered ZrN/(Ti,Al)N coatings by ion-beam-assisted deposition

2008 ◽  
Vol 222 (1) ◽  
pp. 23-26
Author(s):  
M Cao ◽  
L Dong ◽  
G Q Liu ◽  
D J Li
Keyword(s):  
Fracture Resistance ◽  
Room Temperature ◽  
Layer Structure ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Composition Modulation ◽  
Layered Coatings ◽  
Ion Beam Assisted Deposition

ZrN/(Ti, Al)N nanometre multi-layered coatings with different modulation ratios and ion beam fluxes have been synthesized by ion-beam-assisted deposition at room temperature. X-ray diffraction (XRD), a nano indenter, and a profiler were used to characterize the microstructure and mechanical properties of the coatings. The small-angle XRD pattern indicated a well-defined composition modulation and layer structure. The XRD pattern showed a significant mixture of strong ZrN(111) and (Ti,Al)N(111) textures. At an assisted beam flux of 5 mA and modulation ratio of 2:3, the ZrN/(Ti,Al)N multi-layer possessed the highest hardness (30.1GPa) and elastic modulus (361GPa). Its fracture resistance, and residual stress also showed the best results.

Room Temperature Growth of Indium Oxide Films by Reactive Ion Beam Assisted Deposition

2007 ◽  
Vol 1012 ◽  
Author(s):  
Kai Wang ◽  
Yuriy Vygranenko ◽  
Arokia Nathan
Keyword(s):  
Crystal Structure ◽  
Indium Oxide ◽  
Discharge Current ◽  
Room Temperature ◽  
Ion Beam ◽  
Oxide Films ◽  
X Ray ◽  
Oxygen Ion ◽  
Ion Beam Assisted Deposition ◽  
Indium Oxide Films

AbstractConducting and semiconducting indium oxide thin films have been grown at room temperature by oxygen ion beam assisted e-beam evaporation. We studied an influence of the deposition conditions on thin film properties including the crystal structure, resistivity, optical transmittance, stoichiometry, morphology, and intrinsic stress. X-ray diffraction analysis shows that the crystal structure of indium oxide films changes from amorphous to polycrystalline with preferred (222) orientation when the discharge current increases from 0.5 A to 2.0 A. Film resistivity is tailored in a wide range from 3E-4 ohm-cm to 2E9 ohm-cm by modifying both the evaporation rate of indium and the discharge current of the oxygen ion source. X-ray photoelectron spectroscopy data reveal that the highly-resistive films are more oxygen-enriched than the highly-conductive samples due to electrical activity of the oxygen vacancies. Morphological properties are evaluated using an optical profiler and a measured root-mean-square (RMS) roughness is ~1 nm for produced indium oxide films. All films being studied in this work have compressive stress ranging from 0.4 Gpa to 1.8 Gpa. They are highly transparent with a transmittance up to 90%.Thus, high-performance indium oxide films can be engineered by the reactive ion beam assisted deposition to meet the requirements of different applications such as solar cells, photodetectors, OLEDs, transparent TFTs, and optical coatings.

Biaxially Textured Buffer Layers on Large-Area Polycrystalline Substrates

1999 ◽  
Vol 585 ◽  
Author(s):  
J. Dzick ◽  
S. Sievers ◽  
J. Hoffmann ◽  
K. Thiele ◽  
F. Garcia-Moreno ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Thermal Contact ◽  
Deposition Process ◽  
Ion Sources ◽  
Buffer Layers ◽  
Large Area ◽  
Ybco Films ◽  
Ion Beam Assisted Deposition ◽  
Temperature Deposition

AbstractBiaxially textured yttria stabilized zirconia (YSZ) buffer layers were deposited on long polycrystalline metallic tapes by an ion-beam-assisted deposition process (IBAD) to serve as templates for high-current carrying Y1Ba2Cu3O7-x (YBCO) films. YSZ was deposited by a dualionbeam equipment with two 11 cm Kaufman ion sources. The coating of large-area technical substrates, large in comparison with the ion sources, requires substrate movements to render YSZ films of homogeneous texture quality. These movements can hinder cooling of the metallic tapes in the absence of a thermal contact. Therefore, the temperature of those small-heat-capacity substrates could rise to above 100 °C within minutes, causing a decrease of the in-plane alignment of YSZ. The investigation of the temperature dependence of the IBAD process reveals that the best results of the in-plane alignment could be obtained by room temperature deposition. Applying high tape velocities hinder a rise of the deposition temperature to above 90 °C. Therefore, it is possible to deposit YSZ films on metal tapes (up to 60 mm × 1000 mm) with in-plane textures down to 15° full width at half maximum (FWHM), which allow their coating with highcurrent-carrying YBCO films.

Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Crystallographic Texture ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

scholarly journals Optical and electrical properties of Ti-doped In2O3 film deposited on flexible transparent substrates by ion beam assisted deposition under different oxygen flow rate

2021 ◽  
Author(s):  
Pakpoom Chansri ◽  
Pattarapon Pooyodying ◽  
Youl Moon Sung
Keyword(s):  
Flow Rate ◽  
Room Temperature ◽  
Ion Beam ◽  
Flexible Substrate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Flexible Display ◽  
Display Devices ◽  
Ion Beam Assisted Deposition ◽  
Lower Resistivity

Abstract A flexible transparent is an important technology to improve flexible electronic and flexible display devices. Actually, the deposition process of films coated on a flexible substrate will no more than 200 °C or room temperature. In order to achieve high transmission and lower resistivity, this paper reported the thin films of ITiO deposited by ion beam-assisted electron beam under the condition of different oxygen flow rates at room temperature. The electrical, optical, and morphological properties of ITiO films were investigated under the condition of different oxygen flow rates. At the 30 sccm oxygen flow rate, the surface roughness was 5.4 nm, high transmittance and optical bandgap of ITiO films were 89.2% at 470 nm wavelengths and 3.28 eV, respectively. The lowest resistivity of film was 2.1 × 10-4 Ω-cm at 30 sccm oxygen flow rate. Furthermore, the carrier concentration and hall mobility were experimentally investigated, which presented by 42.8 cm2/Vsec and 9.23 × 1020 cm-3. The use ITiO film coated on a flexible substrate with ion beam-assisted electron beam evaporation at room temperature can improve the lower resistivity and high transmission of the flexible device. It was also demonstrated that ITiO film with ion beam-assisted deposition technique is suitable for flexible electronic and flexible display devices.

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