Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

2003 ◽  
Vol 93 (4) ◽  
pp. 1961-1965 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
Yutaka Adachi ◽  
...  
2002 ◽  
Vol 744 ◽  
Author(s):  
Mitsuaki Yano ◽  
Ken-ichi Ogata ◽  
FengPing Yan ◽  
Kazuto Koike ◽  
Shigehiko Sasa ◽  
...  

ABSTRACTCharacteristics of the ZnO and ZnMgO films grown by radical-source molecular beam epitaxy are reported. The ZnO films on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties, and n-type doping with Al was successfully performed up to 1020 cm–3. The Mg-content of ZnMgO alloys was found to be controlled by a simple growth mechanism as a function of Mg-cell temperature. The alloying in the ZnO-rich region resulted in single-crystalline growth although the photoluminescence characteristics at x = 0.22 suggested the presence of microscopic phase separation. Single-crystalline growth was also achieved on Si (111) substrates by using a CaF2 buffer layer to protect the Si-surface from oxidation.


2011 ◽  
Vol 519 (19) ◽  
pp. 6394-6398 ◽  
Author(s):  
Seok Kyu Han ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
Jae Goo Kim ◽  
Myoungho Jeong ◽  
...  

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