scholarly journals Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy

2012 ◽  
Vol 23 ◽  
pp. 5-8 ◽  
Author(s):  
K. Noda ◽  
Y. Terai ◽  
N. Miura ◽  
H. Udono ◽  
Y. Fujiwara
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Condition ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Condition Dependence ◽  
Direct Bandgap

Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

2003 ◽  
Vol 93 (4) ◽  
pp. 1961-1965 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
Yutaka Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Condition ◽  
Molecular Beam ◽  
Electric Properties ◽  
Condition Dependence ◽  
Zno Films ◽  
Sapphire Substrates

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 917-920 ◽  
Author(s):  
T S Cheng ◽  
C T Foxon ◽  
G B Ren ◽  
J W Orton ◽  
Yu V Melnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Substrate Type

scholarly journals Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

2020 ◽  
Vol 59 (SF) ◽  
pp. SFFA01
Author(s):  
Sho Aonuki ◽  
Yudai Yamashita ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 1045-1050 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Negative Anisotropic Magnetoresistance in $\gamma'$-Fe$_{4}$N Epitaxial Films on SrTiO$_{3}$(001) Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 51 ◽  
pp. 068001 ◽  
Author(s):  
Keita Ito ◽  
Kazuki Kabara ◽  
Hirokazu Takahashi ◽  
Tatsunori Sanai ◽  
Kaoru Toko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Anisotropic Magnetoresistance
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