Growth and structural properties of ZnO films on (10−10) m-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 27 (3) ◽  
pp. 1625 ◽  
Author(s):  
Jung-Hyun Kim ◽  
Seok Kyu Han ◽  
Sun Ig Hong ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Zno Films ◽  
Sapphire Substrates

ZnO and ZnMgO Growth by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Mitsuaki Yano ◽  
Ken-ichi Ogata ◽  
FengPing Yan ◽  
Kazuto Koike ◽  
Shigehiko Sasa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Cell Temperature ◽  
Rich Region ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Simple Growth ◽  
Mg Content ◽  
Crystalline Growth

ABSTRACTCharacteristics of the ZnO and ZnMgO films grown by radical-source molecular beam epitaxy are reported. The ZnO films on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties, and n-type doping with Al was successfully performed up to 1020 cm–3. The Mg-content of ZnMgO alloys was found to be controlled by a simple growth mechanism as a function of Mg-cell temperature. The alloying in the ZnO-rich region resulted in single-crystalline growth although the photoluminescence characteristics at x = 0.22 suggested the presence of microscopic phase separation. Single-crystalline growth was also achieved on Si (111) substrates by using a CaF2 buffer layer to protect the Si-surface from oxidation.

Properties of (11–20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 519 (19) ◽  
pp. 6394-6398 ◽  
Author(s):  
Seok Kyu Han ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
Jae Goo Kim ◽  
Myoungho Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Sapphire Substrates ◽  
Different Temperatures

Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

2003 ◽  
Vol 93 (4) ◽  
pp. 1961-1965 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
Yutaka Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Condition ◽  
Molecular Beam ◽  
Electric Properties ◽  
Condition Dependence ◽  
Zno Films ◽  
Sapphire Substrates

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam
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