Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

2002 ◽  
Vol 81 (24) ◽  
pp. 4640-4642 ◽  
Author(s):  
M. H. Choo ◽  
Jae Hoon Kim ◽  
Seongil Im
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hole Transport

Investigation on different organic semiconductor/organic dielectric interfaces in pentacene-based thin-film transistors

2007 ◽  
Vol 1029 ◽  
Author(s):  
Emanuele Orgiu ◽  
Mohammad Taki ◽  
Beatrice Fraboni ◽  
Simone Locci ◽  
Annalisa Bonfiglio
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Thin Film Transistors ◽  
Hole Transport ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Poly Vinyl Alcohol ◽  
Physical Interaction ◽  
Organic Thin Film ◽  
Organic Dielectrics

AbstractOrganic Thin-Film Transistors (OTFTs) in top-contact configuration and Metal-Insulator-Semiconductor (MIS) structures with different organic dielectrics as the gate insulator have been fabricated using the same organic semiconductor layer, pentacene, in order to investigate the changes in the electrical behavior by varying the interface properties. A gold bottom gate electrode was sputtered on a glass substrate whereas gold source and drain were thermally evaporated onto the pentacene layer. Several organic dielectrics have been tested as insulating layers, namely were poly(vinyl alcohol) (PVA), polyvinyl alcohol with ammonium dichromate (PVAad) as a cross-linking agent, poly (4-vinyl phenol) (PVP), poly(dimethylsiloxane) (PDMS) and poly(methylsilsesquioxane) (pMSSQ). The interesting differences found out by varying the interface confirm that the chemical-physical interaction between semiconductor and dielectric is crucial for the conduction mechanisms of the charge carriers. In particular we observed that the electron traps can influence not only the electron transport, therefore allowing a more or less marked ambipolar behavior, but also affect the hole transport.

scholarly journals Ambipolar Transport in Methylammonium Lead Iodide Thin Film Transistors

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 539 ◽  
Author(s):  
Jeoungmin Ji ◽  
Farjana Haque ◽  
Nhu Thi To Hoang ◽  
Mallory Mativenga
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Hole Transport ◽  
Lead Iodide ◽  
Selective Transport ◽  
Indium Zinc Oxide ◽  
P Type ◽  
Methylammonium Lead Iodide ◽  
Ambipolar Transport

We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5–11 and 44–55 MΩ/μm. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio.

Pyrimido[4,5-g]quinazoline-4,9-dione as a new building block for constructing polymer semiconductors with high sensitivity to acids and hole transport performance in organic thin film transistors

2015 ◽  
Vol 3 (45) ◽  
pp. 11937-11944 ◽  
Author(s):  
Jesse Quinn ◽  
Chang Guo ◽  
Bin Sun ◽  
Adrian Chan ◽  
Yinghui He ◽  
...  
Keyword(s):  
Thin Film ◽  
Building Block ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Hole Transport ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polymer Semiconductors

Polymers based on pyrimido[4,5-g]quinazoline-4,9-dione (PQ) building block are sensitive to acids and show good hole transport performance in thin film transistors.

Thiophene backbone-based polymers with electron-withdrawing pendant groups for application in organic thin-film transistors

2020 ◽  
Vol 44 (22) ◽  
pp. 9321-9327 ◽  
Author(s):  
Moon-Ki Jeong ◽  
Kyumin Lee ◽  
Jinhyeon Kang ◽  
Jaeyoung Jang ◽  
In Hwan Jung
Keyword(s):  
Thin Film ◽  
Crystalline Structure ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Hole Mobility ◽  
Hole Transport ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Molecular Ordering ◽  
Quick Freezing

The suboptimal molecular ordering of by PF2-BDD quick freezing during hot-solution spin-coating hindered an efficient hole transport, whereas the more crystalline structure of PT2-BDD resulted in higher hole mobility in the corresponding OTFT.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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