Hole Transport Modulations in Low Dimensional γ-CuI Films: Implication for High Figure of Merit and Thin Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1029-1037 ◽  
Author(s):  
Anil Annadi ◽  
Nengduo Zhang ◽  
David Boon Kiang Lim ◽  
Hao Gong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Figure Of Merit ◽  
Hole Transport ◽  
High Figure ◽  
Low Dimensional

A Study on the Electrodeposition Behavior of Cobalt Antimonides in Citric Based Solutions

2008 ◽  
Vol 136 ◽  
pp. 75-82 ◽  
Author(s):  
H. Cheng ◽  
H.H. Hng ◽  
Jan Ma
Keyword(s):  
Thin Film ◽  
Chemical Composition ◽  
Energy Conversion ◽  
Figure Of Merit ◽  
Clean Energy ◽  
Deposition Potential ◽  
Deposition Behavior ◽  
High Figure ◽  
Low Dimensional ◽  
Deposited Films

Thermoelectric (TE) materials are attracting renewed attention for clean energy conversion. Reducing the dimension of materials to 2D/1D (e.g. thin film and nanowire) is one major approach to achieve high figure of merit (ZT) in the existing TE materials system. Electrodeposition has been widely used in fabricating various low dimensional TE materials. However, electrodeposition behavior of CoSb3 skutterudites is rarely reported. In this work, we report the co-deposition behavior of cobalt and antimony in citric based solutions by electrodeposition. The effects of deposition potential and concentration of cobalt and antimony containing precursors were studied. The focus of the study will be on the crystalline properties and chemical composition of the deposited films.

High Figure of Merit in Lossy Mode Resonance Sensors with PtSe2 Thin Film

Plasmonics ◽  
2020 ◽  
Author(s):  
Chunyan Qiu ◽  
Shuaiwen Gan ◽  
Yuanjiang Xiang ◽  
Xiaoyu Dai
Keyword(s):  
Thin Film ◽  
Figure Of Merit ◽  
High Figure

Investigation on different organic semiconductor/organic dielectric interfaces in pentacene-based thin-film transistors

2007 ◽  
Vol 1029 ◽  
Author(s):  
Emanuele Orgiu ◽  
Mohammad Taki ◽  
Beatrice Fraboni ◽  
Simone Locci ◽  
Annalisa Bonfiglio
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Thin Film Transistors ◽  
Hole Transport ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Poly Vinyl Alcohol ◽  
Physical Interaction ◽  
Organic Thin Film ◽  
Organic Dielectrics

AbstractOrganic Thin-Film Transistors (OTFTs) in top-contact configuration and Metal-Insulator-Semiconductor (MIS) structures with different organic dielectrics as the gate insulator have been fabricated using the same organic semiconductor layer, pentacene, in order to investigate the changes in the electrical behavior by varying the interface properties. A gold bottom gate electrode was sputtered on a glass substrate whereas gold source and drain were thermally evaporated onto the pentacene layer. Several organic dielectrics have been tested as insulating layers, namely were poly(vinyl alcohol) (PVA), polyvinyl alcohol with ammonium dichromate (PVAad) as a cross-linking agent, poly (4-vinyl phenol) (PVP), poly(dimethylsiloxane) (PDMS) and poly(methylsilsesquioxane) (pMSSQ). The interesting differences found out by varying the interface confirm that the chemical-physical interaction between semiconductor and dielectric is crucial for the conduction mechanisms of the charge carriers. In particular we observed that the electron traps can influence not only the electron transport, therefore allowing a more or less marked ambipolar behavior, but also affect the hole transport.

scholarly journals Ambipolar Transport in Methylammonium Lead Iodide Thin Film Transistors

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 539 ◽  
Author(s):  
Jeoungmin Ji ◽  
Farjana Haque ◽  
Nhu Thi To Hoang ◽  
Mallory Mativenga
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Hole Transport ◽  
Lead Iodide ◽  
Selective Transport ◽  
Indium Zinc Oxide ◽  
P Type ◽  
Methylammonium Lead Iodide ◽  
Ambipolar Transport

We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5–11 and 44–55 MΩ/μm. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio.

Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

2002 ◽  
Vol 81 (24) ◽  
pp. 4640-4642 ◽  
Author(s):  
M. H. Choo ◽  
Jae Hoon Kim ◽  
Seongil Im
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hole Transport

Pyrimido[4,5-g]quinazoline-4,9-dione as a new building block for constructing polymer semiconductors with high sensitivity to acids and hole transport performance in organic thin film transistors

2015 ◽  
Vol 3 (45) ◽  
pp. 11937-11944 ◽  
Author(s):  
Jesse Quinn ◽  
Chang Guo ◽  
Bin Sun ◽  
Adrian Chan ◽  
Yinghui He ◽  
...  
Keyword(s):  
Thin Film ◽  
Building Block ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Hole Transport ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polymer Semiconductors

Polymers based on pyrimido[4,5-g]quinazoline-4,9-dione (PQ) building block are sensitive to acids and show good hole transport performance in thin film transistors.

High figure of merit observed in SBN thin film based EO modulator employing WCSPR technique

2021 ◽  
Vol 137 ◽  
pp. 106816
Author(s):  
Surbhi Gupta ◽  
Ayushi Paliwal ◽  
Vinay Gupta ◽  
Monika Tomar
Keyword(s):  
Thin Film ◽  
Figure Of Merit ◽  
High Figure
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