Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S treatment

2018 ◽  
Vol 81 ◽  
pp. 90-94 ◽  
Author(s):  
Yow-Jon Lin ◽  
Cheng-Chun Hung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hole Transport ◽  
Temperature Dependent

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Pentacene thin-film transistors with sol–gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric

2008 ◽  
Vol 85 (2) ◽  
pp. 414-418 ◽  
Author(s):  
Wei Wang ◽  
Guifang Dong ◽  
Liduo Wang ◽  
Yong Qiu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel

Temperature-dependent charge injection and transport in pentacene thin-film transistors

2015 ◽  
Vol 30 (11) ◽  
pp. 115020 ◽  
Author(s):  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Ji-Ho Park ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Charge Injection ◽  
Temperature Dependent

scholarly journals Sol–Gel PMMA–ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

ACS Omega ◽  
2017 ◽  
Vol 2 (10) ◽  
pp. 6968-6974 ◽  
Author(s):  
Clemente G. Alvarado-Beltrán ◽  
Jorge L. Almaral-Sánchez ◽  
Israel Mejia ◽  
Manuel A. Quevedo-López ◽  
Rafael Ramirez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Hybrid Layers
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