Thiophene backbone-based polymers with electron-withdrawing pendant groups for application in organic thin-film transistors

2020 ◽  
Vol 44 (22) ◽  
pp. 9321-9327 ◽  
Author(s):  
Moon-Ki Jeong ◽  
Kyumin Lee ◽  
Jinhyeon Kang ◽  
Jaeyoung Jang ◽  
In Hwan Jung

The suboptimal molecular ordering of by PF2-BDD quick freezing during hot-solution spin-coating hindered an efficient hole transport, whereas the more crystalline structure of PT2-BDD resulted in higher hole mobility in the corresponding OTFT.

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29164-29171 ◽  
Author(s):  
Kangjian Miao ◽  
Gil Jo Chae ◽  
Xiaoxue Wu ◽  
Qinghai Shu ◽  
Xin Zhu ◽  
...  

A semi-fluorinated DPP based polymer showed hole mobility about 3 times higher than did its non-fluorinated analogue.


2012 ◽  
Vol 24 (18) ◽  
pp. 2441-2446 ◽  
Author(s):  
Jeremy Smith ◽  
Weimin Zhang ◽  
Rachid Sougrat ◽  
Kui Zhao ◽  
Ruipeng Li ◽  
...  

2015 ◽  
Vol 3 (34) ◽  
pp. 8932-8941 ◽  
Author(s):  
Nanjia Zhou ◽  
Sureshraju Vegiraju ◽  
Xinge Yu ◽  
Eric F. Manley ◽  
Melanie R. Butler ◽  
...  

Diketopyrrolopyrrole (DPP) end capped tetrathienoacene (TTA) small molecules approaching the hole mobility 0.1 cm2 V−1 s−1 in OFET and efficiency >4% in OPV.


2015 ◽  
Vol 3 (45) ◽  
pp. 11937-11944 ◽  
Author(s):  
Jesse Quinn ◽  
Chang Guo ◽  
Bin Sun ◽  
Adrian Chan ◽  
Yinghui He ◽  
...  

Polymers based on pyrimido[4,5-g]quinazoline-4,9-dione (PQ) building block are sensitive to acids and show good hole transport performance in thin film transistors.


2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Yongbo Yuan ◽  
Gaurav Giri ◽  
Alexander L. Ayzner ◽  
Arjan P. Zoombelt ◽  
Stefan C. B. Mannsfeld ◽  
...  

1997 ◽  
Vol 18 (3) ◽  
pp. 87-89 ◽  
Author(s):  
D.J. Gundlach ◽  
Y.Y. Lin ◽  
T.N. Jackson ◽  
S.F. Nelson ◽  
D.G. Schlom

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


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