Epitaxial growth of YBCO films on metallic substrates buffered with yttria-stabilized zirconia

2002 ◽  
Author(s):  
B. Ma
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ybco Films ◽  
Metallic Substrates

Epitaxial growth and capacitance-voltage characteristics of BiFeO3/CeO2/yttria-stabilized zirconia/Si(001) heterostructure

2012 ◽  
Vol 100 (25) ◽  
pp. 252908 ◽  
Author(s):  
Zhongqiang Hu ◽  
Meiya Li ◽  
Yongdan Zhu ◽  
Shizhou Pu ◽  
Xiaolian Liu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Capacitance Voltage

Effects of homoepitaxial surfaces and interface compounds on the in-plane epitaxy of YBCO films on yttria-stabilized zirconia

1992 ◽  
Vol 7 (7) ◽  
pp. 1641-1651 ◽  
Author(s):  
D.K. Fork ◽  
S.M. Garrison ◽  
Marilyn Hawley ◽  
T.H. Geballe
Keyword(s):  
Optimal Transport ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Growth Surface ◽  
Stabilized Zirconia ◽  
Ybco Films ◽  
Yttria Content ◽  
Compositional Variations

Control of the in-plane epitaxial alignment of c-axis YBa2Cu3O7−δ (YBCO) films on yttria-stabilized zirconia (YSZ) substrates is necessary for achieving optimal transport properties. We have used pulsed laser deposition to grow homoepitaxial YSZ and heteroepitaxial CeO2 on YSZ single crystal substrates. This procedure dramatically improves the epitaxy of YBCO and reduces the number of low and high angle grain boundaries. We have also studied the effects of preparing the YSZ growth surface with approximately monolayer amounts of CuO, Y2O3, BaO, and BaZrO3 to determine the effects these compositional variations have on the subsequent YBCO epitaxy. CuO, Y2O3, and BaZrO3 induce an in-plane crystallography of YBCO distinct from that initiated with BaO. Both homoepitaxy and monolayer depositions may be carried out in situ and are simple and effective for controlling the epitaxy and electrical properties of YBCO on YSZ. The effects of substrate temperature, oxygen pressure, and yttria content have also been studied.

Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route

CrystEngComm ◽  
2014 ◽  
Vol 16 (21) ◽  
pp. 4369-4372 ◽  
Author(s):  
Yue Zhao ◽  
Wei Wu ◽  
Xiao Tang ◽  
Niels Hessel Andersen ◽  
Zhenghe Han ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Epitaxial Growth ◽  
Critical Current ◽  
Current Density ◽  
Yttria Stabilized Zirconia ◽  
Chemical Solution ◽  
Stabilized Zirconia ◽  
High Critical Current Density ◽  
Solution Route ◽  
Chemical Solution Route

A high critical current density of 3 MA cm−2 (77 K, self-field) was achieved on a YBa2Cu3O7 film deposited on Ce0.9La0.1O2 buffered yttria-stabilized zirconia substrate, which is an all-chemical derived configuration.

Study of the epitaxial growth of CeO2(001) on yttria-stabilized zirconia/Si(001)

1998 ◽  
Vol 192 (1-2) ◽  
pp. 175-184 ◽  
Author(s):  
V Trtı́k ◽  
R Aguiar ◽  
F Sánchez ◽  
C Ferrater ◽  
M Varela
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

EPITAXIAL GROWTH OF BUFFER LAYERS AND YBCO FOR COATED CONDUCTOR

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3156-3159
Author(s):  
J. YANG ◽  
H. Z. LIU ◽  
H. ZHANG ◽  
F. QU ◽  
Q. ZHOU ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Seed Layer ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Coated Conductor ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray

An Y 2 O 3 film, as seed layer, was directly deposited on the meter long length rolling assisted biaxially textured substrate (RABiTS) NiW tapes by the reactive magnetron sputtering process. Yttria stabilized zirconia (YSZ) and CeO 2 films were further carried out as the barrier and cap layers, and YBCO layer was prepared by magnetron sputtering technique as well. X-ray diffraction was employed to characterize the texture of film. The results showed that on NiW tapes highly textured films were obtained.

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