Epitaxial growth and capacitance-voltage characteristics of BiFeO3/CeO2/yttria-stabilized zirconia/Si(001) heterostructure

2012 ◽  
Vol 100 (25) ◽  
pp. 252908 ◽  
Author(s):  
Zhongqiang Hu ◽  
Meiya Li ◽  
Yongdan Zhu ◽  
Shizhou Pu ◽  
Xiaolian Liu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Capacitance Voltage

Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route

CrystEngComm ◽  
2014 ◽  
Vol 16 (21) ◽  
pp. 4369-4372 ◽  
Author(s):  
Yue Zhao ◽  
Wei Wu ◽  
Xiao Tang ◽  
Niels Hessel Andersen ◽  
Zhenghe Han ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Epitaxial Growth ◽  
Critical Current ◽  
Current Density ◽  
Yttria Stabilized Zirconia ◽  
Chemical Solution ◽  
Stabilized Zirconia ◽  
High Critical Current Density ◽  
Solution Route ◽  
Chemical Solution Route

A high critical current density of 3 MA cm−2 (77 K, self-field) was achieved on a YBa2Cu3O7 film deposited on Ce0.9La0.1O2 buffered yttria-stabilized zirconia substrate, which is an all-chemical derived configuration.

Study of the epitaxial growth of CeO2(001) on yttria-stabilized zirconia/Si(001)

1998 ◽  
Vol 192 (1-2) ◽  
pp. 175-184 ◽  
Author(s):  
V Trtı́k ◽  
R Aguiar ◽  
F Sánchez ◽  
C Ferrater ◽  
M Varela
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

EPITAXIAL GROWTH OF BUFFER LAYERS AND YBCO FOR COATED CONDUCTOR

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3156-3159
Author(s):  
J. YANG ◽  
H. Z. LIU ◽  
H. ZHANG ◽  
F. QU ◽  
Q. ZHOU ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Seed Layer ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Coated Conductor ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray

An Y 2 O 3 film, as seed layer, was directly deposited on the meter long length rolling assisted biaxially textured substrate (RABiTS) NiW tapes by the reactive magnetron sputtering process. Yttria stabilized zirconia (YSZ) and CeO 2 films were further carried out as the barrier and cap layers, and YBCO layer was prepared by magnetron sputtering technique as well. X-ray diffraction was employed to characterize the texture of film. The results showed that on NiW tapes highly textured films were obtained.

Single domain epitaxial growth of yttria-stabilized zirconia on Si(111) substrate

2008 ◽  
Vol 34 (4) ◽  
pp. 1047-1050 ◽  
Author(s):  
S. Kaneko ◽  
K. Akiyama ◽  
T. Ito ◽  
Y. Hirabayashi ◽  
S. Ohya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Single Domain ◽  
Stabilized Zirconia
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