Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route

CrystEngComm ◽  
2014 ◽  
Vol 16 (21) ◽  
pp. 4369-4372 ◽  
Author(s):  
Yue Zhao ◽  
Wei Wu ◽  
Xiao Tang ◽  
Niels Hessel Andersen ◽  
Zhenghe Han ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Epitaxial Growth ◽  
Critical Current ◽  
Current Density ◽  
Yttria Stabilized Zirconia ◽  
Chemical Solution ◽  
Stabilized Zirconia ◽  
High Critical Current Density ◽  
Solution Route ◽  
Chemical Solution Route

A high critical current density of 3 MA cm−2 (77 K, self-field) was achieved on a YBa2Cu3O7 film deposited on Ce0.9La0.1O2 buffered yttria-stabilized zirconia substrate, which is an all-chemical derived configuration.

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2011 ◽  
Vol 4 (5) ◽  
pp. 053101 ◽  
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Takanori Akiike ◽  
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Epitaxial Growth ◽  
Critical Current ◽  
Current Density ◽  
High Critical Current Density

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Critical Current Density ◽  
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2000 ◽  
pp. 577-579 ◽  
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Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Surface Oxidation ◽  
High Critical Current Density

scholarly journals Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

2011 ◽  
Vol 98 (24) ◽  
pp. 242510 ◽  
Author(s):  
Takayoshi Katase ◽  
Hidenori Hiramatsu ◽  
Vladimir Matias ◽  
Chris Sheehan ◽  
Yoshihiro Ishimaru ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Flexible Substrates ◽  
High Critical Current Density ◽  
Metal Tape
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