Evidence for the physical basis and universality of the elimination of particulates using dual-laser ablation. II. Dynamic time-resolved target reflectivity of metals and film growth of Zn

2002 ◽  
Vol 91 (4) ◽  
pp. 1837-1844 ◽  
Author(s):  
Pritish Mukherjee ◽  
Shudong Chen ◽  
John B. Cuff ◽  
Sarath Witanachchi
2002 ◽  
Vol 91 (4) ◽  
pp. 1828-1836 ◽  
Author(s):  
Pritish Mukherjee ◽  
Shudong Chen ◽  
John B. Cuff ◽  
Palanikumaran Sakthivel ◽  
Sarath Witanachchi

2009 ◽  
Vol 27 (2) ◽  
pp. 281-290 ◽  
Author(s):  
E. Fazio ◽  
F. Neri ◽  
P.M. Ossi ◽  
N. Santo ◽  
S. Trusso

AbstractAg thin films were deposited by pulsed laser ablation in a controlled Ar atmosphere. The deposition process was performed at different Ar pressure values in the range between 10 and 100 Pa to investigate the influence of ambient gas pressure on the plasma expansion dynamics and on the film structural properties. Position, velocity and volume of the laser generated plasma as functions of time were obtained by time resolved fast photography. The morphological properties of the films were investigated by transmission electron microscopy which shows that film growth proceeds via aggregation on the substrates of nanoclusters formedin the expandingplume. The formation of nanoparticles takes place as a consequence of plasma confinement induced by the interaction with ambient gas species. Data from fast photography analysis were used as input parameters to calculate the size of the nanoparticles using a model that takes into account the collisional nature of the laser generated silver plasma.


2000 ◽  
Vol 617 ◽  
Author(s):  
S. Witanachchi ◽  
A. M. Miyawa ◽  
P. Mukherjee

AbstractCarbon plasmas produced by excimer laser ablation show a low ionization yield of about 8-10%. The coupling of a second CO2laser pulse into the plasma in the dual-laser ablation process significantly increases the plasma temperature and the ionization. The resulting rapid expansion of the plasma gives rise to high ion kinetic energies and broader ion expansion profiles [1]. Optical emission spectroscopy and an ion probe have been used to investigate the dynamics of the carbon plasma. Single and dual-laser ablated carbon plumes have been deposited on DC-biased silicon substrates to form amorphous carbon films. The diamond-like behavior of these films was studied by Raman spectroscopy. The Raman spectra were deconvolved to gauge the effect of the density and the energy of ions on the formation of diamond-like sp3 -bonded carbon (DLC) films. The advantage offered by the dual-laser process for the growth of DLC films is discussed.


1995 ◽  
Vol 66 (12) ◽  
pp. 1469-1471 ◽  
Author(s):  
S. Witanachchi ◽  
K. Ahmed ◽  
P. Sakthivel ◽  
P. Mukherjee

2004 ◽  
Author(s):  
Hanriete P. de Souza ◽  
Egberto Munin ◽  
Carlos Eduardo de Vilhena Paiva ◽  
Leandro P. Alves ◽  
Marcela L. Redigolo ◽  
...  

2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.


2011 ◽  
Vol 1305 ◽  
Author(s):  
Ikurou Umezu ◽  
Shunto Okubo ◽  
Akira Sugimura

ABSTRACTThe Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.


1999 ◽  
Vol 18 (3) ◽  
pp. 99-109 ◽  
Author(s):  
Yongxin Tang ◽  
Zhenhui Han ◽  
Qizong Qin

Pulsed laser ablation of TiO2 at 355 nm and 532 nm has been investigated using an angleand time-resolved quadrupole mass spectrometric technique. The major ablated species include O (m/e = 16), O2 (m/e = 32), Ti (m/e = 48), TiO (m/e = 64) and TiO2 (m/e = 80). The time-of-flight (TOF) spectra of ablated species are measured for the ionic and neutral ablated species, and they can be fitted by a Maxwell – Boltzmann (M – B) distribution with a center-of-mass velocity. The measured angular distributions of the ionic species (O+ and Ti+) and the neutral species (O and Ti) can be fitted with cos⁡nθ and a cos⁡θ + (1−a)cos⁡nθ, respectively. In addition, a continuous wave oxygen molecular beam is introduced into the ablated plume, and the enhancement of the signal intensities of TiO is observed. It implies that the ablated Ti atoms/ions species can react with ambient oxygen molecules in the gas phase. In the meanwhile, the physicochemical mechanism of pulsed laser ablation of TiO2 is discussed.


Author(s):  
Yasuaki Okano ◽  
Yoichiro Hironaka ◽  
Ken-ichi Kondo ◽  
Kazutaka G. Nakamura

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