Characterization of inductively coupled plasma in the ionized physical vapor deposition system

2002 ◽  
Vol 91 (4) ◽  
pp. 1797-1803 ◽  
Author(s):  
K.-F. Chiu ◽  
Z. H. Barber
Keyword(s):  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Inductively Coupled ◽  
Ionized Physical Vapor Deposition

Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD

2015 ◽  
Vol 15 (10) ◽  
pp. 8099-8102 ◽  
Author(s):  
Chan-Hwa Hong ◽  
Jae-Heon Shin ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
Bo-Sul Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Large Area ◽  
Inductively Coupled ◽  
Structural And Electrical Properties ◽  
Ito Thin Films ◽  
Enhanced Mobility ◽  
Ionized Physical Vapor Deposition ◽  
Ito Films

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

scholarly journals Coupling and Shielding Properties of the Baffle in ICP System

2011 ◽  
Vol 2011 ◽  
pp. 1-7
Author(s):  
Jozef Brcka ◽  
R. Lee Robison
Keyword(s):  
Magnetic Fields ◽  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Three Dimensional ◽  
String Model ◽  
Inductively Coupled ◽  
Computational Evaluation ◽  
The Many ◽  
Ionized Physical Vapor Deposition ◽  
Slot Structure

This contribution is dealing with experimental and computational evaluation of the deposition baffle that is transparent to radio frequency (RF) magnetic fields generated by an external antenna in an inductively coupled plasma (ICP) source but opaque to the deposition of the metal onto a dielectric wall in ionized physical vapor deposition (IPVD) system. Various engineering aspects related to the deposition baffle are discussed. Among the many requirements focus is on specific structure of the slots and analysis to minimize deposition on the baffle (we used a string model for simulating the profile evolution) and deposition through the DB on dielectric components of the ICP source. Transparency of the baffle to RF magnetic fields is computed using a three-dimensional (3D) electromagnetic field solver. A simple two-dimensional sheath model is used to understand plasma interactions with the DB slot structure. Performance and possible failure of device are briefly discussed.

Influences on ionization fraction in an inductively coupled ionized physical vapor deposition device plasma

2002 ◽  
Vol 91 (2) ◽  
pp. 605-612 ◽  
Author(s):  
Daniel R. Juliano ◽  
David N. Ruzic ◽  
Monica M. C. Allain ◽  
Douglas B. Hayden
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Inductively Coupled ◽  
Ionization Fraction ◽  
Ionized Physical Vapor Deposition
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